Microwave Ring Resonator Layout for Uniform ECR Plasma
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Solution Overview
Problem
Existing plasma processing apparatuses face challenges in achieving uniform plasma density distribution due to excessive localization of plasma near the sidewalls and reduced density near the substrate, primarily caused by high-order modes in the microwave propagation, leading to inefficiencies and potential defects in semiconductor manufacturing.
Innovation Solution
A plasma processing apparatus is designed with a microwave three-dimensional circuit system that includes a branch circuit, ring resonator, and coaxial line to promote m=1 mode propagation, reducing high-order modes and enhancing uniformity by optimizing the microwave distribution within the processing chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional microwave three-dimensional circuit system is used, then plasma generation is achieved, but plasma density distribution becomes non-uniform with excessive localization near sidewalls
Solution Approach 1:
The patent changes the propagation mode parameter from high-order modes to fundamental mode (m=1) by optimizing the microwave three-dimensional circuit system dimensions and configuration. This parameter change transforms the plasma density distribution from localized near sidewalls to uniform across the substrate, resolving the contradiction between plasma generation and uniformity control
2Quantity of substance
If high-order modes are present in microwave propagation, then plasma generation occurs, but plasma density near substrate is reduced
Solution Approach 1:
The patent optimizes the microwave circuit dimensions (a, b, d) to change the propagation characteristics from high-order modes to fundamental mode. This increases the plasma density near the substrate while maintaining overall uniformity, resolving the contradiction between plasma quantity and distribution quality
3Manufacturing precision
If conventional microwave circuit configuration is used, then device structure is simple, but plasma uniformity across substrate is poor
Solution Approach 1:
The patent optimizes specific dimensional parameters (a, b, d) of the microwave three-dimensional circuit system to achieve fundamental mode propagation. This parameter optimization improves in-plane plasma uniformity while maintaining a relatively simple device structure, resolving the contradiction between plasma quality and structural complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus achieves improved plasma uniformity and density distribution, enhancing processing efficiency and reducing defects in semiconductor manufacturing by minimizing plasma localization and ensuring consistent plasma generation across the substrate.
Implementation Method 1
there is an apparatus that uses an electron cyclotron resonance (hereinafter referred to as ECR) phenomenon that occurs by combining a microwave and a static magnetic field
Implementation Method 2
a microwave, which propagates in a direction perpendicular to the static magnetic field and has a microwave electric field perpendicular to the static magnetic field (referred to as an X wave), resonates with electrons in the plasma, and energy of the microwave is strongly absorbed by the electrons
Data Source
AI summary
A plasma processing apparatus including a processing chamber including therein a sample stage on which a substrate to be processed is placed; a magnetic field generating unit configured to generate a magnetic field inside the processing chamber; a microwave power source configured to generate microwave power; microwave power transfer units configured to transfer the microwave power; and a microwave three-dimensional circuit unit configured to supply the transferred microwave power into a processing chamber via a dielectric window. The microwave three-dimensional circuit unit includes a branch circuit configured to branch the microwave power transferred by the microwave power transfer unit in a plurality of azimuth directions, a ring resonator configured to resonate the microwave power branched in the plurality of azimuth directions by the branch circuit, and a coaxial line configured to supply the microwave power resonated by the ring resonator into the processing chamber via the dielectric window.