3D Microwave Substrate Metallization for Full Surface Coverage
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Solution Overview
Problem
Existing manufacturing processes for microwave devices struggle with achieving full metal coverage on complex 3D structures without dead spaces, leading to issues like metal surface cracks, poor bonding, and increased insertion loss.
Innovation Solution
A manufacturing apparatus and method that utilize a fixture with a rotating base and swinging carrier, combined with a source for releasing metal ions from multiple angles, to ensure complete metal coverage on the insulating substrate of microwave devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If chemical plating of Pd and Cu or chemical plating of Pd and Ni followed by electroplating of Cu and Ag is used to ensure bonding strength, then bonding strength is improved, but surface roughness increases (Ra up to 1.6 μm)
Solution Approach 1:
The patent applies preliminary surface treatment (roughening with roughening solution and/or sandblasting) before metallization to enhance bonding strength. This preliminary action creates surface roughness that improves mechanical interlocking between the metal layer and substrate, though it results in higher final surface roughness (Ra up to 1.6 μm).
Solution Approach 2:
The patent changes the chemical composition and deposition parameters of the metal layers through multi-stage plating processes (chemical plating of Pd and Cu or Pd and Ni, followed by electroplating of Cu ≥5 μm and Ag ≥1 μm). This parameter optimization ensures adequate bonding strength while attempting to control surface roughness, though the roughening预处理 dominates the final roughness value.
2Ease of manufacture
If the surface of the insulating substrate is not at a certain angle relative to the source during vacuum treatment, then the process is simpler, but metal plating becomes very thin or leads to dead spaces in bottom areas
Solution Approach 1:
The patent employs a rotatable substrate holder that can rotate the insulating substrate to different angles relative to the metal ion source during vacuum metallization. This dynamic adjustment ensures that metal ions can reach all surfaces including bottom areas of resonant columns, separation walls, and cavity walls, preventing dead spaces and ensuring uniform metal coverage throughout the 3D structure.
3Strength
If roughening with roughening solution and/or sandblasting is applied to ensure bonding, then bonding strength is improved, but insertion loss increases due to greater roughness
Solution Approach 1:
The patent applies preliminary surface treatment (roughening with roughening solution and/or sandblasting) before metallization to enhance bonding strength. This preliminary action creates surface roughness that improves mechanical interlocking between the metal layer and substrate, though it results in higher final surface roughness (Ra up to 1.6 μm) and increased insertion loss.
Solution Approach 2:
The patent optimizes the metallization process parameters including metal layer composition (Pd/Cu or Pd/Ni followed by Cu and Ag plating), deposition thickness (Cu ≥5 μm, Ag ≥1 μm), and deposition conditions to achieve adequate bonding strength while attempting to minimize surface roughness impact on electrical performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves full metal coverage without dead spaces, resulting in a metal layer with high bonding strength and low surface roughness, which enhances the electrical properties and stability of microwave devices.
Implementation Method 1
a source for releasing metal ions towards the insulating substrate
Data Source
AI summary
The present invention relates to a manufacturing apparatus and a manufacturing method for microwave means. The manufacturing apparatus (1) for microwave means comprises: a fixture (10, 10′), the fixture (10, 10′) comprising a base (11) capable of rotating about a first axis (A1), and a carrier (12) capable of swinging about a second axis (A2), the carrier (12) being connected to the base (11) so as to hold an insulating substrate (40), wherein the first axis (A1) intersects the second axis (A2); a source (20) for releasing metal ions towards the insulating substrate (40); and a controller (30), the controller (30) coupled to the fixture (10, 10′) and the source (20) and configured to control a movement pattern of the fixture (10, 10′) and/or an angle of the source (20) such that the insulating substrate (40) receives the metal ions from a plurality of angles and a metal layer (50) is formed over all surfaces (41) of the insulating substrate (40).