Microwave Substrate Heating for Selective Etching Uniformity

The patent replaces conventional thermal heating methods with microwave heating technology. The microwave generating unit generates microwaves that penetrate the substrate and convert to thermal energy through dielectric heating, achieving rapid temperature increase (600°C/s or higher) while distributing heat more uniformly throughout the substrate, thereby reducing thermal damage compared to conventional surface heating methods.

The patent changes the heating parameter from conventional thermal conduction to microwave radiation. By controlling microwave power, frequency, and exposure time, the system achieves precise temperature control during substrate treatment processes, enabling rapid heating without excessive temperature gradients that cause substrate damage.

The patent incorporates a temperature sensing unit that continuously monitors substrate temperature during microwave heating. The control unit receives temperature signals from the sensing unit and adjusts microwave power output in real-time, creating a closed-loop feedback system that maintains precise temperature control even during rapid heating processes, preventing temperature runaway and ensuring uniform temperature distribution.

The patent employs dynamic adjustment of microwave heating parameters during the substrate treatment process. The system can modulate microwave power, pulse duration, and frequency based on real-time temperature feedback and process requirements, enabling adaptive temperature control that maintains precision while achieving rapid heating rates.