Microwave Waveguide for Nitride Semiconductor Film Formation
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Solution Overview
Problem
Semiconductor substrate warping due to high temperatures during nitride semiconductor formation, and damage from high-energy ions and radicals at lower temperatures during plasma decomposition of group V material gas.
Innovation Solution
A semiconductor manufacturing apparatus with a first supply part for group III elements and a second supply part for group V elements, utilizing a waveguide to irradiate microwaves to the group V element gas, generating radicals and ions with reduced kinetic energy to minimize substrate damage and warping.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the substrate is heated to more than 1000 degrees Celsius to improve NH3 decomposition efficiency, then the decomposition efficiency is improved, but the substrate warping occurs
Solution Approach 1:
The patent changes the decomposition method from thermal decomposition to plasma decomposition. By introducing microwave irradiation (2.45 GHz) to generate plasma, the group V material gas is decomposed at lower temperatures (below 1000°C), thereby maintaining substrate flatness while achieving sufficient decomposition efficiency through plasma-generated radicals and ions.
Solution Approach 2:
The patent replaces the thermal field (heating system) with a plasma field (microwave irradiation system). Instead of using high-temperature thermal energy to decompose the gas, the invention uses microwave-induced plasma to generate reactive species, thus avoiding substrate warping caused by excessive heating.
2Ease of manufacture
If the group V material gas is decomposed by using shower head and stage as electrodes at 60 MHz to form nitride semiconductor, then the film formation is achieved, but the high-energy ions and radicals cause damage to the substrate
Solution Approach 1:
The patent changes the frequency parameter from low frequency (60 MHz or less) to high frequency (2.45 GHz microwave). This frequency change fundamentally alters the plasma characteristics, generating radicals and ions with lower kinetic energy that are less damaging to the substrate while still effective for film formation.
Solution Approach 2:
The patent uses waveguides to introduce microwave energy into the reaction chamber, creating a plasma environment without requiring the shower head and stage to function as electrodes. This alternative approach copies the desired plasma effect while avoiding the harmful high-energy ion generation associated with low-frequency electrode-based plasma.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively forms nitride semiconductor films with reduced substrate damage and warping, achieving uniform film quality and thickness by controlling microwave frequency and waveguide arrangement to optimize radical distribution.
Implementation Method 1
a waveguide configured to irradiate a microwave to the gas including the one or more group V elements
Implementation Method 2
utilizing a waveguide to irradiate microwaves to the group V element gas, generating radicals and ions with reduced kinetic energy
Implementation Method 3
the group V material gas is decomposed into plasma separately from the group III material gas, generating ions and radicals
Implementation Method 4
decomposes a group V material gas and an organic material gas including group III elements
Implementation Method 5
a heater configured to heat the substrate
Data Source
AI summary
A semiconductor manufacturing apparatus includes a first supply part configured to supply a gas including one or more group III elements on a substrate accommodated in a reaction chamber, a second supply part configured to supply a gas including one or more group V elements on the substrate, and a waveguide configured to irradiate a microwave to the gas including the one or more group V elements.