Mid-Infrared Light Receiving Device Nitriding Layer Dark Current Reduction
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Solution Overview
Problem
The existing light receiving devices with mid-infrared sensitivity suffer from leakage current due to dangling bonds formed at the interface between the mesa structure and the passivation film, which acts as a dark current path.
Innovation Solution
A light receiving device with a mesa structure featuring a nitriding layer made of a nitride containing a group III constituent element, positioned between the side surface of the mesa and the oxygen-containing passivation film, preventing direct contact and reducing leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a passivation film is formed on the mesa structure side surface, then the device isolation and protection are improved, but dangling bonds form at the interface causing leakage current
Solution Approach 1:
A nitride layer is introduced as an intermediary between the semiconductor mesa structure and the passivation film. This intermediate layer prevents direct contact between the passivation film and semiconductor surface, eliminating the formation of dangling bonds at the interface while maintaining device isolation and protection functions.
Solution Approach 2:
The nitride layer is formed on the semiconductor mesa structure side surface before the passivation film is deposited. This preliminary action prepares the surface by creating a stable nitride interface that prevents subsequent dangling bond formation when the passivation film is applied.
2Ease of manufacture
If the substrate is exposed to atmosphere during transfer, then the manufacturing process is simplified, but dangling bonds form at the semiconductor surface
Solution Approach 1:
The nitride layer is formed on the semiconductor surface before atmospheric exposure during substrate transfer. This preliminary protective action ensures that even when the substrate is exposed to atmosphere, the semiconductor surface remains protected from oxidation and dangling bond formation.
Solution Approach 2:
The nitride layer serves as a protective intermediary between the semiconductor surface and the atmospheric environment during transfer operations, preventing direct interaction between oxygen/moisture and the semiconductor surface while allowing simplified manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The nitriding layer effectively isolates the semiconductor layers from the passivation film, significantly reducing the dark current density in mid-infrared light receiving devices.
Implementation Method 1
nitriding the stacked semiconductor layer exposed at a side surface of the semiconductor mesa by irradiating a nitrogen plasma to form a nitriding layer on the side surface of the semiconductor mesa
Implementation Method 2
irradiating a nitrogen plasma to form a nitriding layer
Implementation Method 3
a passivation film disposed on the nitriding layer, the passivation film containing oxygen
Data Source
AI summary
A light receiving device includes a mesa structure including a light absorption layer disposed on a semiconductor region; a passivation film disposed on a side surface of the mesa structure, the passivation film containing oxygen; and a nitriding layer disposed between the side surface of the mesa structure and the passivation film. The light absorption layer includes a super-lattice structure including first semiconductor layers and second semiconductor layers that are alternately stacked. The first semiconductor layer is made of a III-V group compound semiconductor. The second semiconductor layer is made of a III-V group compound semiconductor that is different from the III-V group compound semiconductor of the first semiconductor layer. The first semiconductor layer contains antimony as a group V constituent element. In addition, the nitriding layer is made of a nitride containing a group III constituent element of the first semiconductor layer and/or the second semiconductor layer.