Middle Bezel Frame Heat Dissipation Structure

The patent combines a vapor chamber (heat dissipation component) with the middle bezel frame (structural component) into an integrated heat dissipation structure. The vapor chamber is formed as an integral part of the middle bezel frame through laser welding, merging the heat dissipation function and structural support function into a single unified component. This resolves the contradiction by eliminating the need to choose between copper (good heat conduction, weak structure) and aluminum (good structure, weaker heat conduction), as the integrated structure achieves both requirements simultaneously.

The patent replaces the diffusion bonding process (thermal/chemical joining method) with laser welding (localized thermal joining method). Diffusion bonding requires prolonged high-temperature exposure that vaporizes the working fluid in vapor chambers and damages wick structures. Laser welding provides rapid, localized heating that achieves strong structural bonding without prolonged heat exposure, thereby preserving the heat dissipation efficiency and integrity of the vapor chamber components.

The patent extracts and eliminates the adhesive layer from the heat dissipation system. Instead of bonding heat pipes or vapor chambers to the middle bezel frame using adhesive tapes or liquid adhesives (which introduce thermal resistance), the design integrates the vapor chamber as an integral part of the middle bezel frame through laser welding. This removes the thermal barrier created by adhesives and achieves direct thermal contact between the heat dissipation components and the frame structure.

The patent merges the vapor chamber with the middle bezel frame into an integrated structure where the vapor chamber forms an integral part of the frame's thickness rather than being an additional external component. The laser welding process bonds the vapor chamber directly to the frame structure, allowing the heat dissipation function to be embedded within the existing frame thickness. This eliminates the need for separate bonding layers and reduces the overall device thickness compared to conventional approaches where vapor chambers are attached as separate components.