MIG Detector Global Shutter and Pixel Reset
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Solution Overview
Problem
Semiconductor radiation detectors with modified internal gates (MIG) face issues of low dynamic range due to limited full well capacity, high power consumption during row reset, and image blurring of fast-moving objects due to uneven integration period start and end times across pixels.
Innovation Solution
The solution involves enhancing the MIG detector with a global electronic shutter mechanism, separate light-to-signal charge conversion areas, and individual pixel reset using dual MOS clear gates, along with SOI technology for complete pixel isolation, to synchronize integration period start and end times and reduce power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Duration of action of moving object
If row reset mechanism is used in MIG detector, then integration time can be controlled, but power consumption increases due to large current between drain and clear contact
Solution Approach 1:
An additional clear contact is introduced as an intermediary element to enable row reset functionality. This clear contact works in conjunction with clear gates to provide a controlled path for charge discharge, allowing integration time control while managing current flow more efficiently than direct drain-to-clear-contact paths.
Solution Approach 2:
The reset mechanism is segmented into multiple components: clear gates that control charge flow and separate clear contacts that provide discharge paths. This segmentation allows for more precise control of the reset operation, enabling integration time control while reducing the magnitude of current spikes that cause high power consumption.
2Duration of action of moving object
If row reset mechanism is used in MIG detector, then integration time can be controlled, but image quality deteriorates due to blurred images of fast moving objects
Solution Approach 1:
The clear gates are positioned and configured to control charge flow before the reset operation begins. By preliminarily establishing the charge confinement potential wells through the pixel dopings and barrier layers, the system ensures that charges are properly contained during integration and then uniformly discharged during reset, preventing image blur while maintaining integration time control.
Solution Approach 2:
Clear gates act as intermediary control elements between the light-sensitive pixel regions and the clear contacts. These gates precisely control when and how charges are discharged, enabling synchronized reset across pixels while maintaining accurate integration timing, thus preserving image quality of fast-moving objects.
3Duration of action of moving object
If additional clear contact and clear gate are added to enable row reset, then integration time control is achieved, but device complexity increases
Solution Approach 1:
The clear contact structure is designed to serve multiple functions: it acts as an anti-blooming drain to prevent charge overflow, provides a discharge path for row reset operations, and works with clear gates to enable integration time control. This multi-functionality reduces the need for separate dedicated structures for each function, thereby limiting the increase in device complexity.
Solution Approach 2:
The clear contact is merged with the pixel structure such that it shares the same semiconductor layer and doping regions. The clear gates are integrated into the existing pixel matrix layout, combining the reset functionality with the pixel structure rather than adding completely separate components, thus minimizing the increase in device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly improves the dynamic range of MIG detectors, reduces power consumption during pixel resets, and ensures consistent image capture of fast-moving objects by synchronizing integration periods across all pixels.
Implementation Method 1
Visible light detecting semiconductor radiation detector
Implementation Method 2
said pixel voltage being defined as a potential difference between said pixel doping and said first contact
Data Source
AI summary
A semiconductor radiation detector device, comprising a bulk layer (103) of semiconductor material, and on the first surface of the bulk layer (303) in the following order: a modified internal gate layer (104) of semiconductor material of second conductivity type, a barrier layer (305) of semiconductor material of first conductivity type and pixel dopings (131, 132, 133) of semiconductor material of the second conductivity type, adapted to be coupled to at least one pixel voltage in order to create pixels corresponding to pixel dopings, characterized in that the device comprises a first contact of first conductivity type and said pixel voltage is defined as the potential difference between the pixel doping and the first contact.