Millimeter Wave Semiconductor Microstrip to Fin Line Interface
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Solution Overview
Problem
Existing millimeter wave semiconductor chip packaging technologies face challenges in achieving stable broadband frequency characteristics due to significant degradation of RF signal intensity, particularly in connecting microstrip lines to waveguide tubes, which results in signal loss and assembly difficulties.
Innovation Solution
A millimeter wave semiconductor apparatus is designed with a module substrate featuring a base member, line pattern, and ground pattern, where the microstrip line portion and millimeter wave semiconductor chip are wire-bonded at the same level, and a waveguide tube is integrated to support the module substrate, reducing signal loss by minimizing height differences and using a staircase-shaped interface hole for efficient RF signal transmission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a microstrip line portion is inserted into a waveguide tube in an open-state, then broadband frequency characteristics can be achieved, but manufacturing accuracy and assembly difficulty increase significantly
Solution Approach 1:
The patent introduces a fin line portion as an intermediary transition structure between the microstrip line portion and the waveguide tube. The fin line portion includes multiple fin lines that gradually transition the electromagnetic field from the microstrip configuration to the waveguide configuration, enabling broadband frequency characteristics while maintaining manufacturable dimensional tolerances. This intermediate transition structure avoids the need for high-precision direct insertion of microstrip into waveguide.
2Reliability
If the microstrip line portion is inserted into the waveguide tube, then RF signal transmission is enabled, but signal loss increases due to height differences and connection losses
Solution Approach 1:
The patent transitions from a two-dimensional microstrip line configuration to a three-dimensional fin line configuration with multiple vertically arranged fin lines. This dimensional change allows the electromagnetic field to be distributed across multiple conductive elements, reducing impedance discontinuities and minimizing signal loss at the transition interface between microstrip and waveguide sections.
Solution Approach 2:
The fin line portion is segmented into multiple individual fin lines rather than using a single continuous conductor. This segmentation allows for better field distribution and reduced parasitic effects, improving RF signal transmission efficiency and reducing loss in the transition region.
3Adaptability or versatility
If a connection mechanism is provided between microstrip line and waveguide tube, then RF interface functionality is achieved, but device complexity and packaging difficulty increase
Solution Approach 1:
The patent merges the microstrip line portion, fin line portion, and waveguide tube into a single integrated module substrate structure. The base member provides a common platform that supports all three components, eliminating the need for separate connection mechanisms and reducing overall device complexity. The ground pattern is also integrated across all sections, providing continuous reference potential throughout the structure.
Solution Approach 2:
The base member serves multiple functions simultaneously: it provides mechanical support for the microstrip line portion, fin line portion, and waveguide tube; it provides electrical grounding through the ground pattern; and it provides structural rigidity for the entire RF interface assembly. This multi-functionality reduces the number of separate components needed.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a millimeter wave semiconductor apparatus with reduced RF signal loss across a broad frequency band, achieving desirable guiding characteristics for frequencies from 60 to 90 GHz, while allowing for compact and cost-effective packaging.
Implementation Method 1
a waveguide tube configured to guide an RF signal entering and exiting the millimeter wave semiconductor chip
Implementation Method 2
the microstrip line portion and the millimeter wave semiconductor chip are wire-bonded at the substantially same level
Data Source
AI summary
A millimeter wave semiconductor apparatus includes: a module substrate including the millimeter wave semiconductor chip mounted thereon; and a waveguide tube member constituting a package of the chip and the waveguide tube by including the waveguide tube and supporting the module substrate, the module substrate includes: a base member; a line pattern including a microstrip line portion, a fin line portion, and an interface portion formed on one of surfaces of the base member; a ground pattern formed on the other surface of the base member; and a cavity defined by a hole formed through the base member at a center portion thereof and a surface of the ground pattern on a side where the line pattern is formed as a bottom surface for mounting the chip on the bottom surface thereof, and the microstrip line portion and the chip are wire-bonded at the substantially same level.