MIM Capacitor Refractory Metal Barrier Layer
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Solution Overview
Problem
In the manufacturing of metal-insulator-metal (MIM) capacitors, high process temperatures can cause dielectric materials to react with electrode materials, leading to reduced capacitance and increased leakage current, both during formation and in subsequent backend processes.
Innovation Solution
Incorporating a refractory metal layer, such as tungsten nitride, between the electrode and dielectric layers to prevent material reaction, thereby maintaining the dielectric constant and reducing leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If high process temperature deposition is used to form the dielectric layer, then the dielectric layer can be formed on the bottom electrode, but the dielectric material reacts with the bottom electrode material causing decreased dielectric constant and reduced capacitance
Solution Approach 1:
A metal layer is introduced as an intermediary between the bottom electrode and the dielectric layer. This intermediate metal layer acts as a barrier that prevents direct reaction between the dielectric material and the bottom electrode material during high-temperature deposition, thereby maintaining the dielectric constant and preventing capacitance reduction.
2Manufacturing precision
If high process temperature deposition is used to form the dielectric layer, then the dielectric layer can be formed on the bottom electrode, but leakage current is generated due to reaction between dielectric material and bottom electrode material
Solution Approach 1:
The intermediate metal layer serves as a protective barrier that prevents harmful chemical reactions between the dielectric material and the bottom electrode material during high-temperature processing, thereby eliminating the source of leakage current generation.
3Ease of manufacture
If the capacitor is subjected to backend high-temp processes, then subsequent processing can be completed, but the dielectric material reacts with the bottom electrode material affecting device performance
Solution Approach 1:
The metal layer is formed in advance before the dielectric layer and before any backend high-temperature processes. This preliminary protective layer remains in place throughout subsequent manufacturing steps, preventing reaction between the dielectric material and bottom electrode material during backend processing, thereby preserving device performance.
Data Source
AI summary
A capacitor and a manufacturing method thereof are provided. The capacitor includes a first electrode, a first metal layer, a dielectric layer and a second electrode. The first electrode is disposed on a substrate. The first metal layer is disposed on the first electrode. The dielectric layer is disposed on the first metal layer, wherein the material of the first metal layer does not react with the material of the dielectric layer. The second electrode is disposed on the dielectric layer.