MIM Capacitor Architecture With Bi-Layer Dielectric and Thick Electrodes

The patent implements a nested electrode structure where additional electrode layers are deposited inside the deep trench, surrounding the central electrode. This nested configuration increases the effective electrode surface area and capacitance density while maintaining adequate electrode thickness to control resistance, thus resolving the contradiction between capacitance density and resistance.

The patent transitions from planar electrodes to three-dimensional electrodes that extend vertically along the trench walls and include horizontal components. This dimensional change allows the electrodes to achieve both sufficient thickness for low resistance and extended surface area for high capacitance density simultaneously.

By nesting multiple electrode layers within the trench structure, the patent achieves both increased thickness for resistance control and increased surface area for capacitance density, breaking the traditional trade-off between these two parameters.

The patent employs composite electrode structures combining different materials and configurations (central electrode, sidewall electrodes, additional nested layers) to simultaneously optimize both resistance and capacitance density, achieving performance that neither simple thick nor thin electrodes could provide alone.

The patent divides the electrode formation process into multiple sequential deposition steps, each creating a specific electrode component (central electrode, sidewall electrodes, nested layers). This segmentation allows precise control over each electrode's dimensions and properties while maintaining overall process manageability.

The patent performs preliminary electrode layer deposition and patterning before final trench filling and encapsulation. This preliminary action enables precise dimensional control of the complex nested electrode structure while simplifying subsequent processing steps.