MIM Capacitor Electrode Stacking for Variable Capacitance Density
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Solution Overview
Problem
Current metal insulator metal (MIM) capacitors in semiconductor manufacturing have limited equivalent capacitance density options, which cannot meet the diverse requirements of different types of capacitors.
Innovation Solution
A semiconductor structure is designed with multiple electrode layers and dielectric layers, including a base, first and second electrode layers, dielectric layers, and electrically connecting structures, where the third electrode layer overlaps with both regions, allowing for the formation of capacitors between different electrode layers, thereby increasing capacitance density and providing options for various types of capacitors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a single MIM capacitor structure is used, then the manufacturing process is simple, but the equivalent capacitance density is limited and only a single option is provided
Solution Approach 1:
The first electrode layer is divided into two distinct regions (first region and second region), allowing the capacitor to be segmented into multiple functional zones. This segmentation enables different capacitance configurations within the same structure, providing multiple equivalent capacitance density options without requiring entirely separate capacitor designs.
Solution Approach 2:
The patent introduces a vertical stacking dimension by adding a third electrode layer above the second dielectric layer, which overlaps with both first and second regions in the planar view. This multi-layer stacking approach increases capacitance density by utilizing the vertical dimension, effectively creating multiple capacitor units in a compact footprint while maintaining manufacturing feasibility.
2Adaptability or versatility
If the third electrode layer overlaps with both first and second regions, then multiple capacitor configurations are enabled, but the device structure becomes more complex
Solution Approach 1:
The third electrode layer serves multiple functions simultaneously: it forms capacitive overlap with both the first and second regions, enabling different capacitor configurations (first capacitor between first and second electrodes, second capacitor between second and third electrodes). This multi-functional design allows a single structure to provide multiple capacitance options, reducing the need for separate dedicated capacitor structures.
Solution Approach 2:
The patent employs a nested layering approach where the third electrode layer is positioned above the second dielectric layer, which itself is above the second electrode layer, creating a nested configuration. This nesting allows multiple capacitor units to be embedded within a compact vertical stack, providing configuration versatility while minimizing the overall device footprint and complexity.
Data Source
AI summary
A semiconductor structure and a method for forming same are provided. The forming method includes: forming a second electrode layer on a first dielectric layer, where the second electrode layer covers the first dielectric layer in a first region; forming a second dielectric layer on a second electrode layer and in a second region; forming a third electrode layer on the second dielectric layer, where on a projection plane parallel to the base, the third electrode layer has an overlapping region with each of the first region and the second region; and forming a first electrically connecting structure in contact with the second electrode layer, and forming, in the second region, a second electrically connecting structure in contact with the third electrode layer and the first electrode layer; or forming a third electrically connecting structure in contact with the first electrode layer, and forming a fourth electrically connecting structure in contact with the second electrode layer and the third electrode layer. By adjusting a connection relationship between different electrode layers, different equivalent capacitance densities can be obtained, thereby satisfying demands of different types of capacitors.