High-Density MIM Capacitor Structure for Flat Bonding Surfaces
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Solution Overview
Problem
The formation of super high density metal-insulator-metal (MIM) capacitors in semiconductor devices can lead to uneven capping layers, causing bond failure due to non-planar bonding surfaces.
Innovation Solution
The use of dummy metal plates to pad the SHDMIM layers, preventing unevenness in the capping layer and ensuring a level surface for subsequent bonding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If super high density MIM capacitors are formed in semiconductor devices, then capacitor density is improved, but the capping layer becomes uneven causing bond failure
Solution Approach 1:
The patent applies preliminary action by forming dummy metal plates in advance to pad the SHDMIM capacitor layers. These dummy plates are created before the final capping layer deposition to pre-compensate for the unevenness that would otherwise occur, ensuring a level bonding surface is achieved proactively rather than correcting the problem after it occurs.
Solution Approach 2:
The dummy metal plates serve as an intermediary element between the SHDMIM capacitor structure and the capping layer. These intermediate structures absorb the dimensional variations and provide a uniform interface, mediating the transition from the uneven capacitor layers to the flat capping layer required for successful bonding.
2Manufacturing precision
If dummy metal plates are added to pad SHDMIM layers, then bonding surface planarity is improved, but device structure complexity increases
Solution Approach 1:
The dummy metal plates perform multiple functions: they provide vertical padding to achieve planarity, serve as structural support during subsequent processing steps, and maintain electrical isolation where needed. This multi-functionality reduces the need for additional separate structures, thereby limiting the increase in overall device complexity while achieving the desired bonding surface quality.
3Reliability
If dummy metal plates are used for vertical padding, then bond failure risk is reduced, but manufacturing process complexity increases
Solution Approach 1:
The formation of dummy metal plates is merged with the existing SHDMIM capacitor fabrication process. The same deposition and patterning steps used for creating the functional capacitor electrodes are also used to create the dummy plates, combining multiple functions into a single integrated process flow rather than adding separate manufacturing steps.
Data Source
AI summary
Methods of forming a super high density metal-insulator-metal (SHDMIM) capacitor and semiconductor device are disclosed herein. A method includes depositing a first insulating layer over a semiconductor substrate and a series of conductive layers separated by a series of dielectric layers over the first insulating layer, the series of conductive layers including device electrodes and dummy metal plates. A first set of contact plugs through the series of conductive layers contacts one or more conductive layers of a first portion of the series of conductive layers. A second set of contact plugs through the series of dielectric layers avoids contact of a second portion of the series of conductive layers, the second portion of the series of conductive layers electrically floating.