MIM Capacitor Via Structure With Multi-Slope Interconnects
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Solution Overview
Problem
The existing techniques for forming semiconductor structures, particularly for metal-insulator-metal (MIM) capacitors, face challenges in efficiently creating vias with varying shapes and slopes between metallization levels, which affects the capacitance and overall performance of the capacitors.
Innovation Solution
The proposed solution involves forming vias with different shapes and slopes between metallization levels, specifically extending a first via from a conductive line of the second metallization level and a second via from the first via, where the second via contacts the electrodes of the MIM capacitor. This configuration allows for optimized capacitance by varying the surface area and dielectric constant of the capacitor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional via formation techniques are used, then the manufacturing process is simple, but the capacitance optimization is limited due to uniform via shapes and slopes
Solution Approach 1:
The via structure is divided into multiple segments (first via and second via) with different shapes and slopes. The first via has a first slope and the second via has a second slope, allowing each segment to be optimized independently for capacitance while maintaining manufacturability through modular formation processes
Solution Approach 2:
Different regions of the via structure are given different geometric properties. The first via and second via have different slopes and shapes tailored to their specific functional requirements, with the first via optimized for one aspect of capacitance and the second via optimized for another aspect, achieving local optimization throughout the structure
2Manufacturing precision
If vias with varying shapes and slopes are formed, then the capacitance is enhanced, but the manufacturing complexity increases
Solution Approach 1:
The method performs preliminary actions by first forming the first via with its specific slope, then subsequently forming the second via with its different slope. This sequential preliminary formation allows each via to be prepared and optimized before the next step, making the complex multi-slope structure manufacturable through staged processing
Solution Approach 2:
The invention changes geometric parameters (slope angles, via shapes) of different via segments to optimize capacitance. The first via and second via have deliberately different slope parameters and shape characteristics, allowing precise control over the electric field distribution and capacitance value while maintaining compatibility with standard manufacturing processes
3Reliability
If multiple vias with different shapes are used, then the structural integrity is improved, but the device complexity increases
Solution Approach 1:
The second via is formed extending from the first via, creating a nested via structure where one via is positioned within or adjacent to another. This nested configuration improves structural integrity by distributing mechanical stresses across multiple interconnected via elements while maintaining a compact interconnect footprint
Data Source
AI summary
A semiconductor device includes a metal-insulator-metal capacitor disposed between a first metallization level and a second metallization level, the metal-insulator-metal capacitor comprising a first electrode, a second electrode and a third electrode. A first via is extended from and contacts a conductive line of the second metallization level, and a second via is extended from and contacts the first via. The second via contacts the first electrode and the third electrode of the metal-insulator-metal capacitor. A slope of a side surface of the first via is different from a slope of a side surface of the second via.