Integrated Circuit MIM Capacitor and Non-Inductive Resistor
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Solution Overview
Problem
Current semiconductor processes face challenges in integrating capacitors and resistors on the same semiconductor substrate effectively, as existing methods require separate processes and result in increased complexity and costs.
Innovation Solution
A method to form a metal-insulator-metal (MIM) capacitor and a non-inductive resistor simultaneously using a single semiconductor process, involving a substrate with dielectric layers, patterned stacked structures, and metal plugs to create both components on the same substrate, thereby simplifying the process and reducing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate processes are used to form capacitors and resistors on the same semiconductor substrate, then each component can be formed with dedicated optimization, but the manufacturing complexity and processing costs increase
Solution Approach 1:
The patent combines the formation of capacitors and resistors into a single integrated process. A patterned stacked structure containing both capacitor and resistor regions is formed simultaneously, with both components sharing common dielectric layers and conductive layers. This merging eliminates the need for separate fabrication processes while maintaining component performance through shared process steps.
Solution Approach 2:
The patterned stacked structure serves multiple functions simultaneously - it forms both capacitor and resistor regions within the same semiconductor substrate using the same process steps. The structure includes both capacitor electrodes and resistor regions with different conductivity types, enabling dual functionality from a single fabrication sequence.
2Reliability
If separate processes are used to form capacitors and resistors, then each component can be optimized independently, but the processing time and production efficiency decrease
Solution Approach 1:
The patent merges capacitor and resistor formation into one simultaneous process, eliminating sequential processing steps. Both components are formed in the same fabrication sequence using shared dielectric and conductive layers, significantly reducing total processing time while maintaining component quality.
Solution Approach 2:
The fabrication process continues without interruption by forming both capacitor and resistor regions in the same process steps. The patterned stacked structure allows continuous processing where each layer deposition and patterning operation contributes to both component types simultaneously, maximizing production efficiency.
3Manufacturing precision
If separate processes are used for capacitor and resistor formation, then process control is more precise for each component, but the overall manufacturing cost increases
Solution Approach 1:
The patent combines capacitor and resistor fabrication into a single process flow, reducing the number of separate manufacturing steps. Both components share common process steps including dielectric layer formation, conductive layer deposition, and patterning operations, thereby reducing overall manufacturing costs while maintaining precision through consistent process control.
Solution Approach 2:
The patent uses uniform process conditions and materials for forming both capacitor and resistor regions. The same dielectric layers, conductive materials, and fabrication techniques are applied throughout, ensuring homogeneous process control that maintains manufacturing precision while reducing complexity and cost associated with multiple different process sequences.
Data Source
AI summary
An integrated circuit includes a capacitor and a non-inductive resistor. A substrate has a capacitor area and a resistor area. A patterned stacked structure including a bottom conductive layer, an insulating layer and a top conductive layer from bottom to top is sandwiched by a first dielectric layer and a second dielectric layer disposed on the substrate. A first metal plug and a second metal plug contact the top conductive layer and the bottom conductive layer of the capacitor area respectively, thereby the patterned stacked structure in the capacitor area constituting the capacitor. A third metal plug and a fourth metal plug contact the bottom conductive layer and the top conductive layer of the resistor area respectively, and a fifth metal plug contacts the bottom conductive layer and the top conductive layer of the resistor area simultaneously, thereby the patterned stacked structure in the resistor area constituting the non-inductive resistor.