MIM Capacitor Electrode Formation via Segmented CVD and PVD
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Solution Overview
Problem
The existing methods for manufacturing Metal-Insulator-Metal (MIM) capacitors, particularly those using chemical vapor deposition (CVD) for forming upper electrodes, result in higher resistance and damage to the capacitive film, which compromises the reliability of the semiconductor device.
Innovation Solution
A method involving the formation of a first layer on the capacitive film using CVD or atomic layer deposition (ALD) followed by a second layer through physical vapor deposition (PVD) for the upper electrode, while also smoothing the lower electrode surface with a metal oxide film to reduce roughness and damage, thereby improving the reliability and reducing resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the upper electrode is formed by chemical vapor deposition (CVD), then the capacitive film damage is reduced, but the electrode resistance increases
Solution Approach 1:
The upper electrode formation process is segmented into two distinct stages: first forming a protective layer through CVD to protect the capacitive film, then forming the remaining electrode through PVD. This segmentation allows each process to be optimized for its specific function - CVD for film protection and PVD for low-resistance electrode formation.
Solution Approach 2:
A protective layer formed by CVD acts as an intermediary between the capacitive film and the PVD process. This intermediary layer shields the capacitive film from damage during subsequent PVD processing while allowing the PVD process to deposit the electrode material with low resistance.
2Ease of manufacture
If the lower electrode surface is rough, then the manufacturing process is simpler, but the capacitive film damage increases
Solution Approach 1:
A metal oxide film is formed on the lower electrode surface before depositing the capacitive film. This preliminary action creates a smooth, protective surface that prevents damage to the capacitive film during subsequent processing, while the underlying electrode structure remains simple to manufacture.
Solution Approach 2:
The metal oxide film serves as an intermediary layer between the rough lower electrode and the capacitive film. It provides a smooth surface for capacitive film deposition while being easily formed through oxidation of the electrode material.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses damage to the capacitive film, enhances its reliability, and lowers the resistance of the upper electrode, leading to improved electrical properties and increased accuracy in applications like analog-to-digital converters.
Implementation Method 1
a first layer is formed on a surface of the capacitive film through chemical vapor deposition, atomic layer deposition, or metal organic chemical vapor deposition
Implementation Method 2
a first layer is formed on a surface of the capacitive film through chemical vapor deposition, atomic layer deposition, or metal organic chemical vapor deposition
Implementation Method 3
a first layer is formed on a surface of the capacitive film through chemical vapor deposition, atomic layer deposition, or metal organic chemical vapor deposition
Implementation Method 4
a second layer is formed on the first layer through physical vapor deposition
Implementation Method 5
forming a metal oxide film on one surface of the first electrode facing the capacitive film
Data Source
AI summary
Roughness is eliminated and planarization is achieved by a metal oxide film on a surface of a lower electrode. Consequently, damage on a capacitive film caused by the roughness of the lower electrode is reduced. Furthermore, physical damage on the capacitive film is reduced by forming a first layer of an upper electrode by, for example, CVD. Consequently, the damage on the capacitive film is suppressed, and the reliability of the capacitive film is improved. Furthermore, not by forming the whole upper electrode by the CVD or the like, but by forming a second layer by PCD or the like on the first layer, an increase in resistance of the upper electrode is suppressed as well.