MIM Capacitor Spreader Plate for Copper Integration
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Solution Overview
Problem
Current MIM capacitors in integrated circuits suffer from high plate resistance and are difficult to integrate into copper wiring technology, necessitating a structure with reduced plate resistance and improved integration capabilities.
Innovation Solution
The proposed solution involves a metal-insulator-metal (MIM) capacitor structure with a spreader plate and dielectric block configuration, fabricated using a dual-damascene process, where copper interconnects are formed in interlevel dielectric layers, and conductive layers are deposited and polished to ensure co-planarity, reducing resistance and facilitating integration with copper wiring.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional MIM capacitor structures are used in integrated circuits, then capacitor functionality is achieved, but plate resistance is high and integration into copper wiring technology is difficult
Solution Approach 1:
The capacitor structure is segmented into distinct functional regions: copper lower interconnects in first interlevel dielectric, spreader plate in trench, MIM dielectric block, and upper plate in second interlevel dielectric. This segmentation allows each component to be optimized independently for both electrical performance and manufacturability
Solution Approach 2:
The invention transitions from planar capacitor structures to three-dimensional stacked architecture with vertical interconnects through trenches and vias. The spreader plate extends horizontally in the trench to reduce resistance, while vertical connections through multiple dielectric layers enable integration with copper wiring in additional dimensions
2Ease of manufacture
If MIM capacitors are fabricated in wiring levels of integrated circuits, then integration is achieved, but plate resistance remains high
Solution Approach 1:
The spreader plate is specifically designed with extended horizontal extent within the trench to locally reduce resistance at the critical lower interconnect interface. The MIM dielectric block provides localized high-capacitance density where needed, while copper interconnects provide low-resistance pathways in specific regions
Solution Approach 2:
The capacitor employs composite structure combining copper conductors with MIM (metal-insulator-metal) dielectric materials. The spreader plate uses conductive material to reduce resistance, while the MIM dielectric block provides high capacitance, creating a composite structure that achieves both low resistance and high integration compatibility
Data Source
AI summary
A MIM capacitor device and method of making the device. The device includes an upper plate comprising one or more electrically conductive layers, a dielectric block comprising one or more dielectric layers, a lower plate comprising one or more electrically conductive layer; and a spreader plate comprising one or more electrically conductive layers.