MIM Corner Structures in Die Keep-Out Zones Against Crack Propagation

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Solution Overview

Problem

Mechanical shocks during packaging or usage can damage semiconductor dies, necessitating effective low-cost protection methods.

Innovation Solution

Incorporation of metal-insulator-metal (MIM) corner structures in keep-out zones (KOZs) within semiconductor dies to prevent crack propagation in the passivation dielectric layer, using MIM capacitors and corner structures formed through specific etching and deposition processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If mechanical protection structures are added to protect semiconductor dies from shocks, then reliability is improved, but device complexity increases

Engineering Contradiction:

Improveprotection from mechanical shocksVSAvoidstructure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines the protective corner structure with the MIM capacitor structure, allowing the same structural elements to serve both protection and electrical functions. The metal electrodes and dielectric layers form both the capacitor and the protective corner structure, eliminating the need for separate protection components.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The MIM corner structure serves multiple functions simultaneously: it provides mechanical protection to the die corner, maintains keep-out zone requirements for packaging processes, and functions as an electrical capacitor. This multi-functionality reduces overall device complexity while improving reliability.

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Manufacturing precision

If MIM corner structures are formed in keep-out zones, then manufacturing precision is improved, but ease of manufacture deteriorates

Engineering Contradiction:

Improvecrack propagation preventionVSAvoidprocess complexity

Core Design Contradiction:

Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The protective MIM corner structures are formed during the standard capacitor formation process before packaging operations. By preliminarily establishing these structures with appropriate material layers and geometries in the keep-out zones, the design prevents crack propagation during subsequent packaging and dicing operations without requiring additional manufacturing steps.

Inventive Principle:

Principle #10Preliminary action

Data Source

PatentUS12482766B2MIMcap corner structures in the keep-out zones of a semiconductor die and methods of forming the same

Publication Date: 2025.11.25 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A semiconductor die includes semiconductor devices located on a semiconductor substrate, metal-insulator-metal corner structures overlying the semiconductor devices and located in corner regions of the semiconductor die. Metal-insulator-metal corner structures are located in the corner regions of the semiconductor die. Each of the metal-insulator-metal corner structures has a horizontal cross-sectional shape selected from a triangular shape and a polygonal shape including a pair of laterally-extending strips extending along two horizontal directions that are perpendicular to each other and connected to each other by a connecting shape.