MIM and MFM Film Deposition Using Stress-Induced Phase Conversion
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Solution Overview
Problem
The challenge in semiconductor fabrication lies in producing Metal-Insulator-Metal (MIM) and Metal-Ferroelectric-Metal (MFM) devices with high-k or ferroelectric properties at a large scale while maintaining high-quality electrical characteristics within stringent thermal budgets and cost-effectiveness, as conventional methods are time-intensive and complex.
Innovation Solution
A method involving non-Atomic Layer Deposition (non-ALD) and cyclic ALD processes is employed to deposit a composite film, including a first metal electrode, a metal liner, and a dielectric layer with induced in-plane tensile stress, converting the crystalline form to enhance dielectric properties, using materials like titanium nitride and hafnium oxide.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional methods are used to produce MIM and MFM devices with high-k or ferroelectric materials, then device functionality is achieved, but production time increases and process complexity increases
Solution Approach 1:
The patent changes the deposition parameters by using cyclic ALD processes with specific temperature ranges (150°C-600°C for metal liner, lower temperatures for dielectric layers) and controlled cycle numbers to achieve desired thicknesses. This enables precise control over material properties while maintaining production efficiency and reducing process complexity compared to conventional methods
Solution Approach 2:
The patent employs periodic cyclic ALD processes where precursors are deposited in repeating cycles with specific patterns (e.g., alternating between metal precursor and oxygen plasma). This periodic deposition method achieves uniform thin films with controlled properties, improving productivity while simplifying the overall process through standardized cyclic operations
2Length of moving object
If dielectric thickness is reduced for device scaling, then device miniaturization is achieved, but preserving high-k or ferroelectric properties becomes more difficult
Solution Approach 1:
The patent uses parameter changes by controlling deposition temperature (150°C-600°C), oxygen plasma power (50-500 W), and cycle numbers to achieve desired dielectric thicknesses while maintaining high-k and ferroelectric properties. The cyclic ALD process parameters are optimized to ensure uniform deposition and property preservation even at reduced thicknesses
Solution Approach 2:
The patent replaces conventional deposition methods with cyclic ALD processes that use chemical vapor deposition mechanisms instead of physical sputtering. This substitution enables better control over film quality and electrical properties at thin dimensions, maintaining reliability while achieving device scaling
3Reliability
If high-k or ferroelectric materials are used, then superior electrical characteristics are achieved, but thermal budget constraints make material implementation more complex
Solution Approach 1:
The patent changes temperature parameters by conducting cyclic ALD processes at controlled temperatures (150°C-600°C for metal liner, lower temperatures for dielectric layers) that preserve high-k and ferroelectric properties without requiring excessive thermal budgets. This enables material implementation within standard semiconductor manufacturing thermal constraints
4Ease of manufacture
If conventional deposition methods are used, then manufacturing process is simpler, but manufacturing cost increases and scalability decreases
Solution Approach 1:
The patent implements periodic cyclic ALD processes that can be automated and scaled for high-volume manufacturing. The standardized cyclic operations improve manufacturing efficiency and reduce costs through consistent, repeatable processes that are easier to control and scale compared to conventional deposition methods
Solution Approach 2:
The patent optimizes deposition parameters including temperature (150°C-600°C), pressure, and cycle numbers to achieve cost-effective manufacturing. These parameter changes enable high-volume production with controlled material properties, improving scalability and reducing per-unit manufacturing costs
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach increases the dielectric constant and ferroelectricity of the dielectric layer by 10-100%, enabling the production of advanced semiconductor devices with tailored electrical characteristics suitable for high-volume manufacturing.
Implementation Method 1
depositing a first metal liner, via a first cyclic ALD process
Implementation Method 2
inducing a first in-plane tensile stress in the dielectric layer at a first interface between the first metal liner and the dielectric layer, and converting the first crystalline form to a second crystalline form, responsive to the first in-plane tensile stress
Data Source
AI summary
A method, system and apparatus for depositing a composite film, comprising, supporting a substrate, depositing a first metal electrode via a first non-Atomic Layer Deposition (non-ALD) process, depositing a first metal liner, via a first cyclic ALD process, depositing a dielectric layer comprising a first crystalline structure, via a second cyclic ALD process, wherein the dielectric layer is in physical contact with the first metal liner layer and at least in electrical communication with the first metal electrode, inducing a first in-plane tensile stress in the dielectric layer at a first interface between the first metal liner and the dielectric layer and converting the first crystalline structure to a second crystalline structure, responsive to the first in-plane tensile stress.