Miniaturized LTE Antenna Layout for Bandwidth and Efficiency

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Solution Overview

Problem

Existing low profile surface mountable LTE antennas face challenges in achieving a smaller form factor without compromising efficiency due to inherent capacitance buildups and parasitic resonant structures, which degrade bandwidth capabilities.

Innovation Solution

A miniaturized LTE antenna design utilizing a dielectric substrate with specific metallization layers and through hole vias, along with features like choke points and truncations, to minimize capacitance and maximize radiation efficiency, allowing for a form factor of 27 mm by 10 mm by 1.6 mm.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If the antenna form factor is minimized beyond 42mm x 10mm x 3mm, then the size is reduced, but inherent capacitance buildups occur that degrade bandwidth capabilities

Engineering Contradiction:
Improveantenna volumeVSAvoidbandwidth capability
Core Design Contradiction:
Volume of moving objectVSAdaptability or versatility

Solution Approach 1:

The antenna structure is segmented into multiple discrete metallization elements (first through ninth discrete metallizations) arranged in specific patterns on dielectric substrates. This segmentation allows independent optimization of different frequency band resonators, enabling miniaturization while maintaining bandwidth capability across multiple LTE bands.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent transitions from planar 2D metallization patterns to three-dimensional structures by stacking multiple dielectric substrate layers with corresponding metallization patterns on each layer. This dimensional transition enables compact volume reduction while preserving the electrical performance and bandwidth characteristics through vertical layering.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Volume of moving object

If smaller form factor LTE antennas are implemented, then the size is reduced, but unwanted parasitic capacitances result in efficiency dropouts within the operating bandwidth

Engineering Contradiction:
Improveantenna volumeVSAvoidradiation efficiency
Core Design Contradiction:
Volume of moving objectVSReliability

Solution Approach 1:

The patent extracts and removes parasitic capacitance elements from the antenna structure by carefully designing the metallization patterns and spacing. Specific metallization configurations are used to eliminate unwanted resonant structures while maintaining the desired operating bandwidth, thereby preventing efficiency dropouts.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent optimizes geometric parameters of the metallization elements including trace widths, spacing distances, and pattern configurations to minimize parasitic capacitances. By adjusting these parameters, the antenna achieves reduced volume while maintaining high radiation efficiency across the operating frequency range.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS12562490B2Miniaturized long-term evolution antenna
Publication Date: 2026.02.24 TAOGLAS GROUP HLDG LTD
  • US12562490B2 patent drawing
  • US12562490B2 patent drawing
  • US12562490B2 patent drawing

AI summary

A miniaturized long-term evolution (LTE) antenna. In one embodiment, the antenna includes a dielectric substrate comprising a first surface and a second opposing surface; a first metallization layer disposed on the first surface of the dielectric substrate, the first metallization layer comprising a first metallization, a second metallization, a third metallization, and a fourth metallization; and a second metallization layer disposed on the second opposing surface of the dielectric substrate, the second metallization layer comprising a fifth metallization, a sixth metallization, a seventh metallization, an eighth metallization, and a ninth metallization. The antenna includes a plurality of through hole vias that: connect the first metallization with the fifth metallization; connect the second metallization with both the sixth metallization and the seventh metallization; and connect the fourth metallization with both the fifth metallization and the sixth metallization. System level implementations are also disclosed.