Miniaturized Pixel Readout for Low-Light Imaging Sensitivity
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Solution Overview
Problem
Miniaturization of pixels in imaging devices leads to reduced light-receiving areas and decreased light detection sensitivity, especially under low illuminance conditions, resulting in lower signal-to-noise (S/N) ratios and decreased quality of imaging data.
Innovation Solution
The implementation of an imaging device operation method that includes a pixel configuration with a photoelectric conversion element, transistors, and a capacitor, where the transistors' states and potentials are strategically controlled to enhance light detection sensitivity and S/N ratio, allowing for high-quality imaging data acquisition even in low light conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If pixels are miniaturized to achieve high-resolution imaging data, then imaging resolution is improved, but light-receiving area is reduced and light detection sensitivity decreases
Solution Approach 1:
The patent introduces a new operational dimension by implementing dual-mode operation (first period and second period) with different transistor states and capacitor potentials. This temporal and operational dimensionality allows the same miniaturized pixel structure to achieve both high-resolution imaging and high light detection sensitivity by optimizing charge storage and readout mechanisms for different operational requirements
2Measurement precision
If pixels are miniaturized to achieve high-resolution imaging data, then imaging resolution is improved, but the amount of electric charge that can be retained decreases
Solution Approach 1:
The patent applies parameter changes by dynamically adjusting the potential of the capacitor between two distinct states: a first potential during the first period that optimizes charge storage capacity, and a second potential during the second period that optimizes readout performance. This parameter transformation allows miniaturized pixels to retain sufficient electric charge despite reduced physical dimensions
3Reliability
If light-receiving area is increased to improve light detection sensitivity, then light detection sensitivity is improved, but pixel size increases
Solution Approach 1:
The patent introduces dynamic operation modes that allow the pixel to adapt its charge storage and readout characteristics in real-time. By switching between first and second operational periods with different transistor states and capacitor potentials, the system dynamically optimizes light detection sensitivity without requiring increased physical pixel area, maintaining high sensitivity in compact pixels
4Measurement precision
If miniaturized pixels are used to achieve high-resolution imaging, then imaging resolution is improved, but S/N ratio of imaging data decreases under low illuminance conditions
Solution Approach 1:
The patent applies preliminary action by optimizing the capacitor potential and transistor states before the actual imaging and readout operations. During the first period, the system prepares the pixel by setting the capacitor to the first potential and configuring transistors to maximize charge storage efficiency, ensuring that sufficient signal charge is retained before readout, thereby maintaining high S/N ratio in miniaturized pixels under low illuminance conditions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the acquisition of high-quality imaging data with improved light detection sensitivity and S/N ratio, while inhibiting malfunctions and increasing the dynamic range of the imaging device, even in low illuminance conditions.
Implementation Method 1
a photoelectric conversion element, a first transistor, a second transistor, and a capacitor. One electrode of the photoelectric conversion element is electrically connected to one of a source and a drain of the first transistor
Data Source
AI summary
An imaging device including a miniaturized pixel is provided. A pixel is provided with a photoelectric conversion element, a first transistor, a second transistor, and a capacitor. One electrode of the photoelectric conversion element is electrically connected to one of a source and a drain of the first transistor. The other of the source and the drain of the first transistor is electrically connected to a gate of the second transistor. The gate of the second transistor is electrically connected to one electrode of the capacitor. In a first period, a first potential is supplied to the other electrode of the capacitor and the first transistor is set in an on state so that imaging data corresponding to illuminance of light delivered to the photoelectric conversion element is written to the pixel. Furthermore, in a second period, a second potential is supplied to the other electrode of the capacitor so that the imaging data is read from the pixel.