Semiconductor Transistor Layering for Miniaturized High On-State Current
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving high integration, high-speed operation, and high reliability while maintaining a small size, particularly for applications in high-resolution display apparatuses for virtual, augmented, and mixed reality systems.
Innovation Solution
A semiconductor device structure comprising specific layers and insulating layers with overlapping openings and regions, allowing for a transistor design with a minute size and high on-state current, enhanced electrical characteristics, and improved reliability, facilitated by a manufacturing method that includes precise etching and deposition processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If transistor size is reduced to achieve high integration, then integration degree is improved, but manufacturing precision requirements increase
Solution Approach 1:
The transistor structure is divided into multiple functional layers (semiconductor layer, first conductive layer, second conductive layer, third conductive layer, fourth conductive layer) with specific openings and insulating regions. This segmentation allows each layer to be optimized independently for its specific function while maintaining overall miniaturization, resolving the contradiction between small size and manufacturing precision by distributing precision requirements across manageable structural components.
Solution Approach 2:
The patent employs a multi-layer vertical structure with openings extending through multiple layers, transitioning from planar to three-dimensional architecture. This dimensional change enables high integration in a compact footprint while distributing manufacturing precision requirements across vertical layers, allowing each layer to be fabricated with standard precision tolerances rather than requiring ultra-precise single-step manufacturing.
2Area of moving object
If transistor size is reduced to achieve high integration, then device area is reduced, but on-state current decreases
Solution Approach 1:
The patent introduces a fourth conductive layer with a fourth opening that provides localized enhancement to the transistor channel region. This local quality improvement allows the transistor to maintain high on-state current in the critical channel area while keeping the overall device footprint small. The insulating layer with fifth opening further localizes the electric field to enhance current flow specifically where needed, decoupling the relationship between overall device size and current capability.
Solution Approach 2:
The transistor employs composite material structures including the semiconductor layer, multiple conductive layers with different materials, and insulating layers. This composite approach enables optimization of each material for its specific function (conductive layers for current flow, insulating layers for field confinement) while maintaining miniaturization. The composite structure achieves high on-state current density in a compact volume by combining materials with complementary properties.
3Reliability
If complex multi-layer structure is implemented to improve electrical characteristics, then device performance is improved, but device complexity increases
Solution Approach 1:
Each layer in the multi-layer structure is designed to serve multiple functions: the fourth conductive layer with its opening provides both current flow path and electric field confinement; the insulating layer with fifth opening provides both isolation and field enhancement; the overlapping openings configuration provides both structural support and current pathway. This multi-functionality reduces the need for additional separate structures, thereby managing device complexity while achieving improved electrical characteristics.
Solution Approach 2:
The patent employs a nested configuration where openings in different layers overlap with each other (first opening overlapping with first conductive layer, second opening overlapping with first opening). This nesting creates a compact three-dimensional current pathway that is efficiently packed within a small footprint. The nested structure achieves high performance by efficiently utilizing space, and the regular overlapping pattern provides a systematic approach to manufacturing that manages complexity through repeatability.
4Manufacturing precision
If precise etching and deposition processes are used to achieve minute size, then manufacturing precision is improved, but production time increases
Solution Approach 1:
The patent structure is designed with preliminary alignment features and standardized opening configurations that can be fabricated using established lithography and etching processes. The overlapping openings and insulating layers are configured to be formed in sequential steps using standard manufacturing sequences, allowing precise miniaturization to be achieved through cumulative precision rather than requiring single ultra-precise operations. This preliminary structuring enables better integration with existing manufacturing capabilities, reducing fabrication time while maintaining precision.
Data Source
AI summary
A semiconductor device including a transistor is provided. The transistor comprises a second conductive layer in contact with a top surface of a first conductive layer. A third conductive layer over the second conductive layer includes a second opening overlapping with a first opening of the second conductive layer. A first insulating layer is in contact with a sidewall of the first opening and a semiconductor layer is in contact with the top surface of the first conductive layer, a side surface of the first insulating layer, and a top surface of the third conductive layer. A second insulating layer is over the semiconductor layer, a fourth conductive layer is over the second insulating layer, and the first insulating layer includes a region interposed between the sidewall of the first opening and the semiconductor layer.