Minimal Contact Edge Ring for Thermal Uniformity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor process chambers experience temperature non-uniformities and thermal stress due to edge rings with different thermal properties than the substrate support, leading to substrate warpage, defects, and processing errors.
Innovation Solution
An edge ring design with an annular body and protrusions that minimizes contact area and heat transfer, coated with light-blocking materials to prevent light leakage and substrate bonding, supporting the substrate at multiple points while allowing for precise temperature measurement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional edge ring is used to support the substrate, then the substrate is secured in position, but temperature non-uniformities occur at the substrate edge due to different thermal properties between the edge ring and substrate support
Solution Approach 1:
The patent removes the conventional edge ring entirely and replaces it with protrusions that extend upward from the substrate support surface. This extraction eliminates the thermal property mismatch between separate edge ring and substrate support components, resolving the temperature non-uniformity issue while maintaining substrate positioning functionality.
Solution Approach 2:
The patent merges the edge ring functionality with the substrate support by integrating the protrusions directly into the substrate support structure. This combination ensures thermal property consistency between the support and positioning elements, eliminating thermal gradients at the substrate edge.
2Use of energy by moving object
If the edge ring is heated to higher temperature during processing, then the substrate is heated, but thermal stress and substrate warpage occur due to excessive temperature at the edge ring
Solution Approach 1:
By removing the conventional edge ring and using protrusions instead, the patent eliminates the component that would otherwise be heated to excessive temperatures. The protrusions are thermally integrated with the substrate support, preventing the formation of high-temperature zones that cause thermal stress and warpage.
Solution Approach 2:
The protrusions provide localized substrate support at specific points without creating extended high-temperature zones. This localized approach allows efficient substrate heating while preventing the edge ring from accumulating excessive heat that would cause thermal stress and warpage.
3Productivity
If light radiation travels between volumes above and below the edge ring, then processing continues, but light leakage causes measurement errors and processing defects
Solution Approach 1:
By replacing the conventional edge ring with protrusions, the patent creates a structure where the substrate support itself blocks light radiation paths. This eliminates light leakage issues that cause measurement errors while maintaining continuous processing operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution reduces thermal gradients and substrate warpage, minimizes defects, and ensures accurate temperature control, enhancing processing uniformity and reducing errors in semiconductor processing.
Implementation Method 1
the inner lip is configured to substantially prevent light radiation from travelling between a first volume disposed above the edge ring and a second volume disposed below the edge ring
Implementation Method 2
a plurality of protrusions extending upward from the inner lip and disposed along the inner edge of the annular body, wherein the plurality of protrusions are arranged to support a substrate above the inner lip
Data Source
AI summary
Embodiments of edge rings for substrate supports of semiconductor substrate process chambers are provided herein. In some embodiments, an edge ring for a semiconductor process chamber may include an annular body having a central opening, an inner edge, an outer edge, an upper surface, and a lower surface, an inner lip disposed proximate the inner edge and extending downward from the upper surface, and a plurality of protrusions extending upward from the inner lip and disposed along the inner edge of the annular body, wherein the plurality of protrusions are arranged to support a substrate above the inner lip and over the central opening, wherein the inner lip is configured to substantially prevent light radiation from travelling between a first volume disposed above the edge ring and a second volume disposed below the edge ring when a substrate is disposed on the plurality of protrusions.


