Mirror Contact Capacitor Flipped Transistor Bonding
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Solution Overview
Problem
Current semiconductor technologies face challenges in forming high-capacitance trench capacitors efficiently, particularly in integrating them with transistors and substrates to enhance performance in applications like dynamic random-access memory and power supply decoupling.
Innovation Solution
A method involving flipping and bonding a transistor structure to a new substrate, forming trenches for capacitors that extend into the substrate, and using high-k dielectric materials to create a trench capacitor structure adjacent to the transistor, allowing for increased capacitance and integration with the semiconductor layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional trench capacitor formation methods are used, then manufacturing process simplicity is maintained, but capacitance per unit area is insufficient
Solution Approach 1:
The patent applies inversion by flipping the transistor structure 180 degrees and bonding it to a new substrate with the capacitor formation surface facing upward. This allows the trench capacitor to be formed on the previously bottom surface of the transistor, enabling high capacitance per unit area while maintaining compatibility with existing semiconductor manufacturing processes through the flipped configuration.
Solution Approach 2:
The patent extends the trench capacitor vertically down into the substrate, utilizing the third dimension (depth) to increase capacitance. The trench structure allows the capacitor to occupy vertical space rather than only horizontal plane area, thereby achieving high capacitance per unit area by exploiting the depth dimension of the substrate.
2Quantity of substance
If high-k dielectric materials are used in trench capacitors, then capacitance is increased, but manufacturing process complexity increases
Solution Approach 1:
The patent performs preliminary actions by forming the trench structure and applying the high-k dielectric material to the flipped transistor surface before final substrate bonding. This sequence allows the high-k dielectric to be deposited on a stable, accessible surface, simplifying the manufacturing process while still achieving high capacitance in the final integrated structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of high-capacitance trench capacitors that enhance performance in memory and power supply applications by increasing capacitance and improving integration with existing semiconductor structures.
Implementation Method 1
bonded to a second substrate
Data Source
AI summary
A semiconductor structure and a method for fabricating the same. The semiconductor structure includes a substrate and a bonding layer in contact with a top surface of the substrate. At least one transistor contacts the bonding layer. The transistor includes at least one gate structure disposed on and in contact with a bottom surface of a semiconductor layer of the transistor. The semiconductor further includes a capacitor disposed adjacent to the transistor. The capacitor contacts the semiconductor layer of the transistor and extends down into the substrate. The method includes forming at least one transistor and then flipping the transistor. After the transistor has been flipped, the transistor is bonded to a new substrate. An initial substrate of the transistor is removed to expose a semiconductor layer. A capacitor is formed adjacent to the transistor and contacts with the semiconductor layer. A contact node is formed adjacent to the capacitor.