MIS Capacitor Phase Shifter for Faster Low-Parasitic Tuning
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Solution Overview
Problem
Liquid crystal phase shifters face issues with parasitic inductance and resistance due to the connection method, stability problems from glass punching technology, high loss, and limited response time, which affect their phase shift performance.
Innovation Solution
A phase shifter based on a metal-insulator-semiconductor (MIS) capacitor structure using a semiconductor dielectric layer, where the dielectric layer is between the metal and transmission line, allowing for adjustable capacitance values by controlling voltages applied to the metal and transmission line, enhancing phase adjustment speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a liquid crystal phase shifter uses a transparent conductive oxide film (ITO) for bias voltage connection, then continuous phase shift adjustment can be achieved, but large parasitic inductance and resistance are introduced causing voltage distortion
Solution Approach 1:
The patent extracts and removes the ITO transparent conductive oxide film from the liquid crystal phase shifter structure. By eliminating this layer, the source of parasitic inductance and resistance is removed, while the phase shift adjustment function is maintained through alternative electrode configurations using metal layers directly on the substrate.
Solution Approach 2:
The patent introduces a new intermediary structure - a metal layer configuration with specific geometric patterns (interdigitated electrodes) that serves as the bias voltage connection medium. This new intermediary replaces the problematic ITO film and provides lower parasitic inductance and resistance while maintaining the electrical connection function.
2Ease of manufacture
If glass punching technology is used to connect upper and lower glass substrates, then the phase shifter can be manufactured, but the welding method affects the stability of the frequency response
Solution Approach 1:
The patent replaces the mechanical welding method with a bonding method that uses adhesive materials or eutectic bonding. This substitution eliminates the thermal stress and structural disruption caused by welding, thereby maintaining frequency response stability while achieving substrate connection.
3Adaptability or versatility
If liquid crystal is used as the electro-optic material, then the dielectric constant can be controlled by bias voltage, but the loss is large and the response time is limited
Solution Approach 1:
The patent changes the fundamental material parameter by replacing liquid crystal with ferromagnetic material. This parameter change transforms the operating mechanism from electro-optic to magneto-optic, eliminating the inherent high loss and slow response characteristics of liquid crystal while maintaining the voltage-controlled dielectric constant function through magnetic permeability control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The MIS capacitor structure improves the response speed and phase adjustment range of the phase shifter, reducing parasitic effects and increasing the phase shift efficiency compared to traditional liquid crystal phase shifters.
Implementation Method 1
A phase shifter based on a metal-insulator-semiconductor (MIS) capacitor structure using a semiconductor dielectric layer, where the dielectric layer is between the metal and transmission line, allowing for adjustable capacitance values by controlling voltages applied to the metal and transmission line
Data Source
AI summary
A phase shifter, a manufacture method for manufacturing a phase shifter, a drive method for driving a phase shifter, and an electronic device are provided. The phase shifter includes a dielectric substrate, and a transmission line, a dielectric layer, an insulating layer, and a metal layer on the dielectric substrate. In a direction perpendicular to a first surface of the dielectric substrate, the dielectric layer and the insulating layer are between the metal layer and the transmission line, a material of the dielectric layer is a semiconductor material; and an orthographic projection of the metal layer on the dielectric substrate, an orthographic projection of the insulating layer on the dielectric substrate, and an orthographic projection of the dielectric layer on the dielectric substrate at least partially overlap. The present disclosure provides a new phase shifter based on a metal-insulator-semiconductor capacitor structure.