Miscut Substrate Epitaxy With Through Holes for Dislocation Reduction
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Solution Overview
Problem
The high number of dislocations in semiconductor film layers due to lattice mismatch, polarity effects, and thermal expansion coefficient differences leads to cracking and degradation of device performance during epitaxial growth of group III-V compound semiconductors.
Innovation Solution
A semiconductor structure is designed with a miscut angle substrate and a mask layer featuring through holes, allowing the epitaxial layer to grow within these holes, diverting dislocations away from the extending direction and terminating them at the sidewalls, thereby reducing dislocation density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If epitaxial growth is performed on a substrate with group III-V compound semiconductors, then high-speed, high-frequency, high-power and light-emitting electronic devices can be manufactured, but dislocation occurs due to lattice mismatch, polarity effect, and thermal expansion coefficient difference
Solution Approach 1:
The substrate surface is segmented into multiple regions through the mask layer with through holes, allowing selective epitaxial growth in specific areas. This segmentation enables better control over dislocation propagation paths and reduces overall dislocation density in the semiconductor film layer
Solution Approach 2:
The mask layer acts as an intermediary structure between the substrate and the epitaxial layer. It provides a controlled interface that manages the lattice mismatch and thermal expansion differences, reducing dislocation formation while enabling successful epitaxial growth of group III-V compounds
2Manufacturing precision
If the thickness of group III-V compound semiconductor film layer reaches critical value, then device performance can be improved, but cracking occurs resulting in degradation and failure
Solution Approach 1:
The through holes in the mask layer introduce a vertical dimension control mechanism that allows the epitaxial layer to grow in a controlled manner. This dimensional control prevents uniform stress distribution that leads to cracking, enabling the film layer to reach critical thickness without failure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces dislocation density and improves crystal quality, enhancing the performance and reliability of semiconductor devices.
Implementation Method 1
at least part of the epitaxial layer is located in the through hole
Data Source
AI summary
A semiconductor structure includes: a miscut angle substrate; a mask layer located on a side of the miscut angle substrate, where the mask layer includes a through hole penetrating through the mask layer; and an epitaxial layer, where at least part of the epitaxial layer is located in the through hole. The technical solutions of the present disclosure may reduce a dislocation density of the semiconductor structure, improve a crystal quality, and improve characteristics of a semiconductor device.