MISIM Device Single Dual NDR Modes

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Solution Overview

Problem

Current negative differential resistance (NDR) devices face challenges in tuning their operation to extend the working range in two-terminal configurations and are often CMOS incompatible or limited to single NDR mode in three-terminal configurations.

Innovation Solution

The Metal-Insulator-Semiconductor-Insulator-Metal (MISIM) structure, which includes a semiconductor layer, insulating layer, and electrodes, allows for adjustable biasing to achieve either single or dual negative differential resistance modes, enabling extended operational ranges and CMOS compatibility.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If two-terminal configuration is used for NDR device, then device simplicity is improved, but working range extension capability deteriorates

Engineering Contradiction:

Improvedevice simplicityVSAvoidworking range extension capability

Core Design Contradiction:

Device complexityVSAdaptability or versatility

Solution Approach 1:

The NDR device is segmented into three terminals (first terminal, second terminal, and third terminal) rather than using a two-terminal configuration. This segmentation allows independent control of voltage applied to each terminal, enabling the device to operate in extended working ranges while maintaining reasonable structural simplicity.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The device employs dynamic voltage control where the voltage between the first and second terminals can be adjusted independently from the voltage between the second and third terminals. This dynamic control capability allows the NDR characteristics to be tuned across extended working ranges, resolving the limitation of fixed two-terminal configurations.

Inventive Principle:

Principle #15Dynamics

2Adaptability or versatility

If three-terminal configuration is used for NDR device, then working range extension capability is improved, but CMOS compatibility deteriorates

Engineering Contradiction:

Improveworking range extension capabilityVSAvoidCMOS compatibility

Core Design Contradiction:

Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The three-terminal NDR device is designed with universal functionality that can operate in multiple modes (single NDR mode and dual NDR mode) depending on voltage application. The device structure and operation are made compatible with existing CMOS fabrication processes, allowing it to serve multiple purposes while maintaining ease of manufacture through standard semiconductor manufacturing techniques.

Inventive Principle:

Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The MISIM structure effectively operates in both single and dual NDR modes, enhancing the operational flexibility and compatibility with CMOS technology, thereby addressing the limitations of existing NDR devices.

Implementation Method 1

an insulating layer disposed over an upper surface of the semiconductor layer

Methodology Applied

Scientific EffectQuantum tunneling:

Data Source

PatentUS11605674B2Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same

Publication Date: 2023.03.14 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.