Mist CVD Nozzle Mixing for Uniform Thin Gallium Oxide Films
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Solution Overview
Problem
Gallium oxide films face challenges in achieving a thin film thickness of 30 μm or less with a favorable film thickness distribution and large area, leading to issues like increased cost, complexity in polishing, and unsatisfactory series resistance, particularly in vertical devices, while maintaining crystallinity and semiconductor properties.
Innovation Solution
A film forming method using a mist CVD process with a nozzle having opposing gas inlets, a gas mixing unit, and a gas outlet, where the linear velocity of the mist at the gas inlets exceeds 0.8V-200 cm/sec, and a film forming apparatus with an atomizer, film forming unit, and nozzle configured to spray mist on a heated substrate, ensuring excellent crystallinity and in-plane film thickness distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If gallium oxide film thickness is reduced to 30 μm or less to improve heat dissipation, then heat dissipation performance is improved, but film thickness distribution becomes difficult to maintain and polishing process complexity increases
Solution Approach 1:
The substrate surface is divided into multiple regions with different heating conditions. The heating unit applies different temperatures to different regions, enabling the formation of thin films with uniform thickness distribution across the entire substrate surface, thereby resolving the contradiction between thin film thickness and thickness uniformity
Solution Approach 2:
The invention changes the temperature parameter distribution across the substrate surface by using a multi-region heating unit. By independently controlling temperatures in different regions, the system achieves uniform film thickness distribution even at reduced film thicknesses of 30 μm or less, improving heat dissipation while maintaining manufacturing precision
2Temperature
If gallium oxide film thickness is reduced to 30 μm or less to improve heat dissipation, then heat dissipation performance is improved, but polishing process complexity and cost increase
Solution Approach 1:
By segmenting the heating into multiple regions with independent temperature control, the invention achieves uniform thin film formation directly during the deposition process. This eliminates the need for complex post-deposition polishing procedures, thereby reducing process complexity and cost while maintaining thin film thickness for heat dissipation
Solution Approach 2:
The invention replaces mechanical polishing processes with a controlled deposition process that achieves the desired thickness and uniformity directly. By using multi-region temperature control during film formation, the system eliminates the need for subsequent mechanical polishing, reducing device complexity
3Temperature
If gallium oxide film is made thin to improve heat dissipation, then heat dissipation is improved, but series resistance in vertical devices becomes unsatisfactory
Solution Approach 1:
The invention changes the temperature distribution parameter across the substrate during deposition. By optimizing the temperature profile in different regions, the system achieves thin films with improved electrical properties, maintaining low series resistance while enabling effective heat dissipation in vertical devices
4Productivity
If large-area substrates are used to increase production area, then productivity is improved, but maintaining uniform film thickness distribution becomes more difficult
Solution Approach 1:
The heating unit is divided into multiple independent heating regions that can be controlled separately. This segmentation allows for precise temperature control across large substrate areas, maintaining uniform film thickness distribution even as substrate size increases, thereby enabling higher productivity without sacrificing precision
Solution Approach 2:
The multi-region heating unit provides universal temperature control capability across the entire substrate surface. Each region can be independently adjusted to achieve optimal conditions for uniform film formation, making the system adaptable to large-area substrates while maintaining manufacturing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method and apparatus enable the formation of crystalline oxide films with gallium oxide as the main component, exhibiting excellent crystallinity and semiconductor properties, with a favorable film thickness distribution even on large-area substrates, reducing performance variation and enhancing semiconductor device performance.
Implementation Method 1
sprays mist on a heated substrate from a nozzle to form a crystalline oxide film by a mist CVD method
Implementation Method 2
a gas mixing unit having the gas inlets, and a gas outlet from which the mist is sprayed
Data Source
AI summary
A film forming method that sprays mist on a heated substrate from a nozzle to form a crystalline oxide film by a mist CVD method, wherein the nozzle for use in the method includes at least two or more opposing gas inlets, a gas mixing unit having the gas inlets, and a gas outlet from which the mist is sprayed, and a linear velocity L (cm/sec) of the mist at any one of the two or more opposing gas inlets satisfies L≥0.8V-200, wherein V (cm3) represents a volume of the gas mixing unit. Thus, a film forming method for forming a crystalline oxide film, has excellent crystallinity and a favorable in-plane film thickness distribution even with a large area and a thin film thickness, and has excellent semiconductor properties when applied to a semiconductor device; and a film forming apparatus for performing the film forming method.