Mist CVD Metal Oxide Film Formation Without Sublimation Loss
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Solution Overview
Problem
Existing methods for forming thin films of insulating, conductive, or semiconductive metal oxides, particularly gallium oxide, face challenges in achieving high productivity and semiconductor characteristics due to sublimation reactions during film formation.
Innovation Solution
A film formation method using a metal complex with specific thermophysical properties, such as an exothermic peak at 480° C. to 520° C. in TG-DTA, is employed to form metal oxide films through mist CVD, utilizing a solution of the metal complex that is highly soluble in water, thereby suppressing sublimation and enhancing oxidation reactions for improved productivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional methods are used to form metal oxide films, then film formation is achieved, but sublimation reactions occur during film formation which reduces productivity and film quality
Solution Approach 1:
The patent changes the chemical parameters of the precursor material by selecting a metal complex with specific thermophysical properties (exothermic peak at 480-520°C in TG-DTA). This parameter change in the precursor's decomposition behavior prevents sublimation reactions during film formation, thereby improving both productivity and film quality simultaneously.
2Productivity
If metal complex with specific thermophysical properties is used, then sublimation reactions are suppressed and oxidation reactions are enhanced, but selection and preparation of appropriate metal complex becomes more complex
Solution Approach 1:
The patent establishes specific parameter ranges for the metal complex (exothermic peak at 480-520°C in TG-DTA, water solubility of 0.01 mol/L or higher) that optimize both productivity and simplify the selection process. By defining these parameters, the patent transforms a complex selection problem into a systematic approach based on measurable physical and chemical properties.
3Productivity
If highly water-soluble metal complex is used, then film formation efficiency is improved, but control over decomposition timing and temperature becomes more challenging
Solution Approach 1:
The patent selects metal complexes with water solubility of 0.01 mol/L or higher while maintaining specific thermal decomposition characteristics (exothermic peak at 480-520°C). This combination of solubility and thermal stability parameters enables both high film formation efficiency and precise control over decomposition timing through the characteristic thermal behavior of the selected complexes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves excellent mass productivity and semiconductor characteristics with films exhibiting high electrical mobility and carrier density, suitable for applications in semiconductor devices and light-emitting diodes.
Implementation Method 1
a film containing the metal is formed from a raw material solution including a metal complex containing a Group 9 metal in the periodic table and water
Implementation Method 2
enhancing oxidation reactions for improved productivity
Implementation Method 3
utilizing a solution of the metal complex that is highly soluble in water, thereby suppressing sublimation and enhancing oxidation reactions
Data Source
AI summary
A film formation method having an excellent mass productivity, whereby a time required for forming a film having a desired thickness is short. In the film formation method, the following steps are performed: atomizing or dropletizing a liquid containing a metal complex, the liquid being raw material solution, conveying resulting mist or droplets to a base by a carrier gas, and forming a metal oxide file on the base by thermally reacting the mist or droplets in the vicinity of the base, the metal oxide film comprising a crystalline oxide semiconductor. A metal complex is used, which shows an exothermic peak at 480° C. to 520° C. in a thermogravimetric-differential thermal analysis at a temperature increase rate of 20° C./min under an oxygen-containing atmosphere.