Mist CVD Chamber Susceptor Segmentation for Temperature Uniformity
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Solution Overview
Problem
Existing mist CVD film formation devices face challenges in achieving stable temperature distribution and flow rate within the film forming chamber, leading to difficulties in producing high-quality films, particularly due to issues with temperature and crystallinity in both hot-wall-type and fine channel type devices.
Innovation Solution
A mist CVD film formation device with a film forming chamber design featuring a mist inflow port, a stage for the film forming target, and a mist outflow port with a smaller sectional area than the chamber, along with a heater to heat the stage, and the use of materials with varying thermal conductivities to control temperature and flow, ensuring uniform conditions for film formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a hot-wall-type mist CVD film formation device is used, then high temperature heating is possible, but temperature and flow rate distributions increase making stable film production difficult
Solution Approach 1:
The heating function is segmented from the chamber walls to a dedicated susceptor platform. The susceptor directly contacts the substrate and provides localized heating, while the chamber walls maintain a separate temperature profile. This segmentation allows independent control of substrate temperature and chamber temperature, achieving both high temperature capability and uniform temperature distribution across the substrate surface.
Solution Approach 2:
The susceptor acts as an intermediary between the heating source and the substrate. It receives heating from the heating source and transfers heat uniformly to the substrate surface, mediating the thermal transfer process to eliminate temperature gradients and achieve uniform temperature distribution for stable film formation.
2Manufacturing precision
If the film forming chamber height is reduced to uniform flow rate, then substrate temperature decreases and film crystallinity deteriorates
Solution Approach 1:
The heating function is segmented to a localized susceptor platform rather than heating the entire chamber. This allows the chamber height to be reduced for uniform flow rate control while the susceptor maintains high substrate temperature independently. The segmentation of heating from chamber-wide thermal control enables decoupling of flow rate uniformity and temperature maintenance.
Solution Approach 2:
The heating method is changed from convection heating (chamber-wide) to direct heating (susceptor-based). This parameter change in heating mechanism allows the substrate to achieve and maintain high temperature even in a reduced-height chamber where convection heating would be insufficient, thereby preserving film crystallinity while achieving uniform flow rate.
3Device complexity
If one continuous quartz tube is used, then device simplicity is maintained, but material differentiation between substrate area and mist inflow area becomes difficult
Solution Approach 1:
The chamber structure is segmented into functionally distinct zones: a mist inflow area for reagent introduction and a substrate area for film formation. The susceptor platform creates a physical and thermal boundary between these zones, allowing different materials and environmental conditions in each area while maintaining overall device simplicity. This segmentation enables material differentiation without complex multi-chamber designs.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for the production of high-quality films by maintaining uniform temperature and flow rates, enhancing film crystallinity and stability, as demonstrated by improved XRD patterns and film thickness in experimental examples.
Implementation Method 1
a heater that heats the stage
Implementation Method 2
a mist CVD method is known... being capable of film formation in the atmosphere (non-vacuum process)
Data Source
AI summary
A mist CVD film formation device that includes: a film forming chamber including: a mist inflow port through which a film forming mist containing a mist of a film forming raw material and a carrier gas flows into the film forming chamber, a stage that supports a film forming target, and a mist outflow port through which the film forming mist flows out of the film forming chamber, wherein an outflow port sectional area is smaller than a film forming chamber interior sectional area; and a heater that heats the stage.