Transition Active Pattern Structure for Mixed Fin and Wire Channels
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Solution Overview
Problem
Existing semiconductor devices face challenges in increasing integrated circuit density, improving current control capability, and suppressing short channel effects while maintaining reliability and yield, particularly in multi-gate transistors with three-dimensional channels.
Innovation Solution
The semiconductor device incorporates a substrate with distinct regions and active patterns, including fin-type and wire patterns, and gate structures arranged in specific configurations, utilizing different materials and epitaxial patterns to enhance design diversity and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multi-gate transistors with three-dimensional channels are used to increase integrated circuit density and improve current control capability, then device performance is improved, but manufacturing complexity and defect risk increase
Solution Approach 1:
The active pattern is divided into multiple semiconductor patterns (first, second, third semiconductor patterns) spaced apart from each other, creating a segmented structure that forms three-dimensional channels while maintaining manufacturability through standardized patterning processes
Solution Approach 2:
Gate electrodes are formed surrounding the semiconductor patterns in a nested configuration, with the gate structure enveloping the active pattern from multiple sides to create multi-gate transistors with improved current control capability
2Reliability
If multi-gate transistors with three-dimensional channels are used to suppress short channel effects, then device reliability is improved, but manufacturing precision requirements increase
Solution Approach 1:
The semiconductor patterns are positioned at specific locations (first, second, and third regions) with controlled spacing relationships, creating local variations in the active pattern that enable multi-gate configuration while maintaining overall pattern integrity and reducing alignment sensitivity
Solution Approach 2:
The active pattern with multiple semiconductor patterns is formed in advance before gate electrode formation, establishing the three-dimensional channel structure beforehand to enable subsequent gate wrapping without requiring complex simultaneous patterning operations
Data Source
AI summary
A semiconductor device including a substrate including first and second regions along a first direction, and a third region between the first region and the second region, an active pattern extending in the first direction, on the substrate, and first to third gate electrodes spaced apart from each other and extending in a second direction, on the active pattern, the active pattern of the first region including first semiconductor patterns spaced apart from each other and penetrating the first gate electrode, the active pattern of the second region including second semiconductor patterns spaced apart from each other and penetrating the second gate electrode, the active pattern of the third region including a transition pattern protruding from the substrate and intersecting the third gate electrode and including a sacrificial pattern and a third semiconductor pattern alternately stacked on the third region and including different materials from each other.