Mixed-Phase Thin-Film Resistor Material for High Resistivity and Low TCR

The patent uses a composite material consisting of amorphous phase and crystalline phase in a mixed structure. The amorphous phase provides high resistivity and maintains structural integrity at thin dimensions, while the crystalline phase contributes positive temperature coefficient characteristics. This composite structure enables achieving high resistance values through controlled composition ratios rather than simply reducing thickness, thereby maintaining mechanical strength.

The patent changes the physical and chemical parameters of the resistor material by controlling the composition ratio between amorphous and crystalline phases. By adjusting the proportion of each phase, the patent optimizes both electrical properties (resistivity, TCR) and mechanical properties (strength, uniformity), resolving the contradiction between achieving high resistance and maintaining mechanical integrity.

The amorphous-crystalline composite structure provides inherent uniformity distribution. The amorphous phase, with its disordered atomic structure, naturally distributes properties more uniformly across the film plane compared to fully crystalline structures. This composite approach maintains in-plane uniformity even when achieving high resistance values through optimized composition rather than extreme thinning.

By controlling the composition ratio and phase distribution parameters during material formation, the patent achieves uniform electrical properties across the resistor element plane. The specific parameter control of amorphous phase content ensures consistent resistivity and TCR values throughout the element, maintaining manufacturing precision without sacrificing uniformity.

The patent employs a composite material system combining amorphous and crystalline phases, where each phase contributes different electrical characteristics. The amorphous phase provides high resistivity, while the crystalline phase provides positive temperature coefficient. This composite approach achieves superior operational stability with both high resistivity and small TCR, while the manufacturing process remains relatively simple through conventional film formation and heat treatment techniques.

The patent utilizes phase transition characteristics by forming an amorphous phase that can be partially crystallized through heat treatment. This controlled phase transition allows optimization of electrical properties - the amorphous phase contributes to high resistivity while the crystalline phase develops positive TCR characteristics. The phase transition mechanism enables achieving both high resistivity and small TCR that cannot be obtained with single-phase materials.