Interconnect Assemblies for Mixed-Pitch Integrated Circuit Coupling

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Solution Overview

Problem

Coupling structures formed along a relatively loose pitch with those along a relatively tight pitch in integrated circuitry is challenging due to difficulties in achieving effective connections without shorting, especially as the pitch disparity increases.

Innovation Solution

The implementation of a method involving conductive structures recessed within an insulative support material, with thin interconnects extending upwardly to selectively connect features along a tight pitch with those along a loose pitch, ensuring unique coupling while avoiding shorts by using a repeating pattern of conductive structures spaced along different pitches.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If structures are formed along a tight pitch to achieve high packing density, then the packing density is improved, but it becomes difficult to couple these structures with those formed along a loose pitch

Engineering Contradiction:
Improvepacking densityVSAvoidcoupling difficulty
Core Design Contradiction:
Quantity of substanceVSEase of manufacture

Solution Approach 1:

The patent introduces an intermediary structure (the conductive structure with selective coupling regions) that mediates between the tightly-pitched structures and loosely-pitched structures. This intermediary enables coupling between the two different pitch domains by providing designated coupling regions that selectively interface with specific tightly-pitched structures while being spaced at a larger pitch, thus resolving the coupling difficulty without compromising the high packing density of the memory array.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of operation

If conductive structures are used to couple tightly-pitched and loosely-pitched structures, then connections are enabled, but shorting between adjacent conductive structures may occur

Engineering Contradiction:
Improveconnection capabilityVSAvoidshorting prevention
Core Design Contradiction:
Ease of operationVSReliability

Solution Approach 1:

The conductive structure is designed with non-uniform local properties: it has designated coupling regions with higher conductivity and larger cross-section for making connections, and isolation regions with lower conductivity or smaller cross-section for preventing shorts. This local quality variation enables the conductive structure to simultaneously provide good connection capability at coupling points while maintaining reliability by preventing shorting between adjacent structures through the isolating regions.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The conductive structure is segmented into multiple functional regions along its length: coupling regions that interface with tightly-pitched structures and isolation regions that prevent electrical connection between adjacent conductive structures. This segmentation allows each region to perform its specific function optimally, enabling connections where needed while preventing shorts in other regions.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS11348871B2Integrated assemblies
Publication Date: 2022.05.31 MICRON TECHNOLOGY INC
  • US11348871B2 patent drawing
  • US11348871B2 patent drawing
  • US11348871B2 patent drawing

AI summary

Some embodiments include methods of forming integrated assemblies. First conductive structures are formed within an insulative support material and are spaced along a first pitch. Upper regions of the first conductive structures are removed to form first openings extending through the insulative support material and over lower regions of the first conductive structures. Outer lateral peripheries of the first openings are lined with spacer material. The spacer material is configured as tubes having second openings extending therethrough to the lower regions of the first conductive structures. Conductive interconnects are formed within the tubes. Second conductive structures are formed over the spacer material and the conductive interconnects. The second conductive structures are spaced along a second pitch, with the second pitch being less than the first pitch. Some embodiments include integrated assemblies.