Mixed P/N MOS Array Layout Uniform Spacing
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Solution Overview
Problem
The existing solution for maintaining pattern uniformity in integrated circuits, which relies on buffer zones of dummy devices, results in significant area overhead due to density gradient effects between the edge of the array and surrounding circuitry, leading to inefficiencies in semiconductor device arrays.
Innovation Solution
Implementing a mixed P/N MOS array layout with a uniform gate/oxide diffusion density throughout, eliminating the need for dummy buffers between PMOS and NMOS arrays by ensuring consistent spacing and size of oxide diffusion structures, thereby reducing area penalties and enhancing pattern uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a buffer zone of dummy devices is added to improve pattern uniformity, then pattern uniformity of active MOS devices is improved, but area overhead increases significantly
Solution Approach 1:
The patent merges PMOS and NMOS arrays into a single mixed array structure, eliminating the need for separate dummy buffer zones between different MOS types. By interleaving or adjacent placement of PMOS and NMOS devices with uniform gate/oxide diffusion spacing, the design achieves pattern uniformity without requiring additional dummy devices, thus resolving the contradiction between pattern uniformity and area overhead
Solution Approach 2:
The patent applies uniform gate and oxide diffusion spacing throughout the entire mixed PMOS/NMOS array, creating consistent local density characteristics across different regions. This uniform local quality eliminates the density gradient effects that previously required dummy buffer zones, achieving both pattern uniformity and area efficiency
2Manufacturing precision
If dummy buffer zones are added to reduce density gradient effects, then pattern uniformity at array edges is improved, but device complexity increases
Solution Approach 1:
The mixed PMOS/NMOS array structure serves multiple functions simultaneously: it provides both functional device integration and pattern uniformity maintenance through its uniform gate/oxide diffusion spacing design. This universal structure eliminates the need for separate dummy buffer zones, reducing layout complexity while maintaining manufacturing precision
3Area of stationary object
If uniform gate/oxide diffusion density is implemented in mixed P/N MOS array, then area overhead is reduced, but manufacturing precision may be compromised
Solution Approach 1:
The patent changes the spacing parameters of gate and oxide diffusion structures to achieve uniform density across the mixed PMOS/NMOS array. By carefully selecting and maintaining consistent spacing values between different MOS device types, the design achieves both area efficiency and the required pattern uniformity for manufacturing precision
Data Source
AI summary
A semiconductor structure is disclosed that includes a p-channel metal-oxide semiconductor (PMOS) array having a first set of oxide diffusion layer (OD) structures, an n-channel metal-oxide semiconductor (NMOS) array having a second set of OD structures, and a dummy buffer zone surrounding the PMOS and NMOS arrays. The semiconductor structure has a uniform spacing between OD structures in the first and second sets of OD structures and between the PMOS and NMOS array, such that no dummy buffer zone is included between the PMOS array and the NMOS array.