Mixed Semiconductor H-Bridge for Wireless EV Charging
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Solution Overview
Problem
Wireless charging systems for electric vehicles face challenges in efficiently and safely transferring power due to power losses associated with switching in H-bridge power converters, which can lead to inefficiencies and increased energy losses.
Innovation Solution
The implementation of an H-bridge power converter using semiconductor materials of different types for the switching circuitries, where the first type has a lower forward voltage drop and the second type has lower reverse recovery charge, to minimize conduction and commutation losses by selectively connecting input power supplies to output power supply lines, thereby optimizing power transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If switching is used to control voltage and current in H-bridge power converters, then power conversion capability is improved, but power losses increase
Solution Approach 1:
The patent applies local quality by using different semiconductor material types (e.g., SiC for high-voltage switches, Si for low-voltage switches) in different parts of the H-bridge circuit based on their specific electrical characteristics. This allows each component to operate in its optimal performance range, reducing overall power losses while maintaining the required power conversion capability.
Solution Approach 2:
The patent changes the parameter of semiconductor material type to optimize circuit performance. By selecting materials with different bandgaps, breakdown voltages, and switching characteristics, the system achieves better efficiency across various operating conditions, thereby reducing power losses associated with conventional single-material designs.
2Manufacturing precision
If semiconductor switches are used for power conversion, then power control precision is improved, but conduction losses increase
Solution Approach 1:
The patent uses different semiconductor material types optimized for specific functions: wide-bandgap materials like SiC for high-voltage switches where breakdown resistance is critical, and conventional Si for low-voltage switches where conduction losses are more significant. This localized optimization reduces overall conduction losses while maintaining precise power control.
Solution Approach 2:
The H-bridge circuit employs a composite semiconductor material architecture, combining different material types (e.g., SiC and Si) within the same circuit. This composite approach leverages the advantages of each material to achieve both precise power control and reduced conduction losses, as each material is deployed where its properties are most beneficial.
3Power
If high-voltage switches are used in H-bridge circuit, then power transmission capability is improved, but reverse recovery losses increase
Solution Approach 1:
The patent changes the semiconductor material parameter to wide-bandgap materials (e.g., SiC, GaN) for high-voltage switches. These materials inherently exhibit faster switching speeds and lower reverse recovery charges compared to conventional Si, thereby reducing reverse recovery losses while maintaining or enhancing power transmission capability.
Solution Approach 2:
The patent substitutes conventional semiconductor switching mechanisms with wide-bandgap semiconductor switches that offer fundamentally different switching characteristics. This substitution eliminates the reverse recovery problem associated with traditional PN junction switches, as wide-bandgap devices can achieve much faster turn-off times with minimal reverse recovery charge.
Data Source
AI summary
This disclosure provides systems, methods and apparatus for power converters and particularly power converters for wireless power transfer to remote systems such as electric vehicles. In one aspect, the disclosure provides an electronic power supply. The electronic power supply includes at least first and second half-bridge circuitries. The first half-bridge circuitry includes semiconductor material of a first type. The second half-bridge circuitry of the H-bridge includes semiconductor material of a second type. The first semiconductor material type is different from the second semiconductor material type.