Selective Passivation for High-Selectivity Deposition on Mixed Surfaces
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in achieving high selectivity for selective deposition, often requiring expensive lithographic techniques and surface pretreatments that themselves necessitate lithography, limiting cost-effectiveness and scalability.
Innovation Solution
A method involving the selective formation of an inhibitor layer from vapor phase reactants on one surface of a substrate relative to another, followed by baking and depositing a layer of interest from vapor phase reactants onto the inhibitor layer, with optional surface treatments like plasma exposure or use of silane compounds, to achieve selective deposition without the need for extensive lithography.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithographic techniques are used for patterning, then deposition can be achieved on specific areas, but the process complexity and cost increase significantly
Solution Approach 1:
The patent extracts the patterning function from the lithography process by using selective deposition on pre-formed substrates with different surface compositions. Instead of using lithography to define patterns, the method relies on the inherent compositional differences of substrate surfaces to guide selective material deposition, thereby eliminating complex lithographic steps while maintaining pattern definition capability
Solution Approach 2:
The substrate surfaces perform the patterning function themselves through their inherent compositional differences. Different surface compositions naturally attract or repel specific vapor phase reactants, enabling self-directed selective deposition without requiring external lithographic patterning tools or processes
2Manufacturing precision
If surface pretreatment is applied to achieve selective deposition, then deposition selectivity improves, but additional lithography steps are required
Solution Approach 1:
The patent applies preliminary surface preparation by utilizing pre-formed substrates with different compositions before the selective deposition process. The compositional differences are established in advance, allowing the vapor phase reactants to selectively deposit on appropriate surfaces without requiring additional pretreatment steps or lithography
Solution Approach 2:
The substrate surface composition acts as an intermediary that mediates between the vapor phase reactants and the deposition process. Different compositions serve as selective mediators that attract or repel specific reactants, enabling deposition selectivity without requiring additional treatment layers or lithographic masks
3Ease of manufacture
If vapor phase deposition is used for selective deposition, then processing cost decreases, but deposition selectivity must be sufficiently high
Solution Approach 1:
The patent applies local quality by utilizing local compositional differences across the substrate surface. Different regions of the substrate have distinct compositions that create locally varying affinities for vapor phase reactants, enabling high deposition selectivity through inherent material properties rather than requiring complex process control or expensive equipment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables cost-effective and scalable selective deposition with high selectivity, reducing the number of lithography steps and allowing for enhanced scaling in narrow structures by minimizing deposition on inappropriate surfaces, thereby improving processing efficiency and reducing costs.
Implementation Method 1
selectively forming an inhibitor layer from vapor phase reactants on the first surface relative to the second surface
Implementation Method 2
selectively depositing a layer of interest from vapor phase reactants on the second surface relative to the passivation layer
Implementation Method 3
treating includes exposing the substrate to a plasma
Implementation Method 4
baking includes heating the substrate to a temperature of from about 300 to 400° C.
Data Source
AI summary
Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.