Mixed-Transistor OLED Pixel Circuit for Low Power and Black Luminance

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Solution Overview

Problem

Conventional organic light emitting diode (OLED) displays using low-temperature polycrystalline silicon (LTPS) transistors consume high power due to high turn-off currents, and there is an issue with luminance increase in black images.

Innovation Solution

The use of n-type oxide semiconductor transistors for switching and p-type LTPS transistors for light emission control, along with a compensation transistor to manage threshold voltage, reduces power consumption and prevents luminance increase in black images.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If LTPS transistors are used in the circuit portion, then the transistor can be turned on effectively, but the turn-off current becomes excessively high causing high power consumption

Engineering Contradiction:
Improvepower consumptionVSAvoidturn-off current control
Core Design Contradiction:
PowerVSReliability

Solution Approach 1:

The patent applies different semiconductor material properties to different transistor types within the same pixel circuit. Specifically, n-type oxide semiconductor transistors (with low turn-off current) are used for switching and light emission control, while p-type LTPS transistors (with high mobility) are used for driving. This local differentiation allows each transistor to be optimized for its specific function, resolving the contradiction between power consumption and reliable operation.

Inventive Principle:
Principle #3Local quality

2Illumination intensity

If conventional transistors are used, then the circuit can operate, but the black image luminance increases due to insufficient control of turn-off current

Engineering Contradiction:
Improveblack image luminanceVSAvoidpower consumption
Core Design Contradiction:
Illumination intensityVSPower

Solution Approach 1:

The patent changes the key parameter of semiconductor material type from uniform LTPS to a combination of n-type oxide semiconductor and p-type LTPS. This parameter change fundamentally alters the electrical characteristics, particularly the turn-off current behavior. The n-type oxide semiconductor transistors provide extremely low turn-off current, enabling precise control of pixel current even during off-states, thereby preventing black image luminance increase while maintaining low power consumption.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration lowers power consumption and improves display quality by accurately rendering black images without unnecessary luminance, enhancing the overall efficiency of the OLED display.

Implementation Method 1

an organic light emitting diode which emits light based on the driving current, the driving current flows through the organic light emitting diode

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Data Source

PatentUS12444352B2Organic light emitting diode display
Publication Date: 2025.10.14 SAMSUNG DISPLAY CO LTD
  • US12444352B2 patent drawing
  • US12444352B2 patent drawing
  • US12444352B2 patent drawing

AI summary

An OLED display device includes a pixel having a switching transistor turned on by a scan signal received from a scan line and which transmits a data signal received from a data line to a first node, a driving transistor connected between the first node and a second node and through which a driving current corresponding to the data signal flows, a storage capacitor including one end connected to a power supply and another end connected to a gate electrode of the driving transistor, an OLED emitting light by the driving current, and a light emission control transistor connected between the second node and an anode of the OLED and which is turned on by an light emission control signal and transmits the driving current to the OLED. The switching transistor may be an n-type transistor, and the light emission control transistor is a p-type transistor.