Mixed-Width TSV Structure for SoIC Power and Signal Delivery

Solution Overview

Problem

Existing semiconductor packaging technologies face challenges in achieving high integration density and efficient power and signal delivery due to limitations in through-substrate via (TSV) critical dimensions, leading to high RC delay for signal communication and high IR drop for power delivery, constraining System-on-Integrated-Circuit (SoIC) stacking designs.

Innovation Solution

Incorporating different TSV critical dimensions within a single solution for both power and signal delivery, enabling flexible design for multi-stacking configurations, including face-to-face and face-to-back die-to-die combinations, with large TSVs for power delivery and small TSVs for signal delivery.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If small TSV critical dimensions are used, then signal bandwidth and integration density are improved, but power delivery performance deteriorates due to high IR drop

Engineering Contradiction:

Improveintegration densityVSAvoidpower delivery efficiency

Core Design Contradiction:

Quantity of substanceVSLoss of energy

Solution Approach 1:

The patent segments the TSV population into two distinct groups: small TSVs for signal delivery and large TSVs for power delivery. This segmentation allows each TSV type to be optimized for its specific function, with small TSVs providing high density for signals and large TSVs providing low resistance for power, thereby resolving the contradiction between integration density and power delivery efficiency

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent applies local quality by assigning different critical dimensions to TSVs based on their functional requirements. Small TSVs with critical dimension of 10-20 micrometers are used for signal delivery where high density is needed, while large TSVs with critical dimension of 20-40 micrometers are used for power delivery where low resistance is critical. This local differentiation resolves the contradiction by optimizing each TSV's dimensions for its specific role

Inventive Principle:

Principle #3Local quality

2Loss of energy

If large TSV critical dimensions are used, then power delivery performance is improved, but signal bandwidth and integration density deteriorate due to high RC delay

Engineering Contradiction:

Improvepower delivery efficiencyVSAvoidintegration density

Core Design Contradiction:

Loss of energyVSQuantity of substance

Solution Approach 1:

The patent segments the TSV population into two distinct groups: small TSVs for signal delivery and large TSVs for power delivery. This segmentation allows each TSV type to be optimized for its specific function, with small TSVs providing high density for signals and large TSVs providing low resistance for power, thereby resolving the contradiction between integration density and power delivery efficiency

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent applies local quality by assigning different critical dimensions to TSVs based on their functional requirements. Small TSVs with critical dimension of 10-20 micrometers are used for signal delivery where high density is needed, while large TSVs with critical dimension of 20-40 micrometers are used for power delivery where low resistance is critical. This local differentiation resolves the contradiction by optimizing each TSV's dimensions for its specific role

Inventive Principle:

Principle #3Local quality

3Adaptability or versatility

If mixed TSV configurations are used, then adaptability for multi-stacking is improved, but device complexity increases

Engineering Contradiction:

Improvemulti-stacking flexibilityVSAvoidTSV configuration complexity

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent segments the TSV population into two distinct groups: small TSVs for signal delivery and large TSVs for power delivery. This segmentation allows each TSV type to be optimized for its specific function, with small TSVs providing high density for signals and large TSVs providing low resistance for power, thereby resolving the contradiction between integration density and power delivery efficiency

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent applies local quality by assigning different critical dimensions to TSVs based on their functional requirements. Small TSVs with critical dimension of 10-20 micrometers are used for signal delivery where high density is needed, while large TSVs with critical dimension of 20-40 micrometers are used for power delivery where low resistance is critical. This local differentiation resolves the contradiction by optimizing each TSV's dimensions for its specific role

Inventive Principle:

Principle #3Local quality

Data Source

PatentUS20250349691A1Semiconductor device and method

Publication Date: 2025.11.13 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

In an embodiment, a device may include a first structure comprising a first surface and a second surface opposite the first surface. The first structure may include a first substrate and a first through substrate via (TSV) exposed from the second surface of the first substrate. The first TSV may have a first width. The device may also include a second TSV exposed from the second surface of the first structure, where the second TSV has a second width smaller than the first width. The device may further include a guard ring surrounding each of the first and second TSVs. Additionally, the device may include a second structure bonded to the first surface of the first structure, where the first surface has first bond pads.