Adaptive Error Correction for Multi-Level Cell Flash Memory

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Solution Overview

Problem

Conventional error correction methods for flash memory in enterprise storage environments are inefficient in achieving low uncorrectable bit error rates over the total service life and traffic loads, particularly in solid-state drives (SSDs) using multi-level cell (MLC) flash memory, leading to reliability and performance issues.

Innovation Solution

The solution involves grouping flash pages across multiple dies and implementing a redundant error correction scheme that includes journaling cell slots for user data and grid parity data, allowing for adaptive selection of error correction codes and efficient data storage and retrieval, enabling seamless operation despite die failures and reducing overprovisioning, power consumption, and endurance impacts.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional error correction methods are used for MLC flash memory, then device complexity is reduced, but uncorrectable bit error rates increase and reliability deteriorates

Engineering Contradiction:
Improveuncorrectable bit error rateVSAvoiderror correction scheme complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent segments the flash memory into multiple independent page stripes, each with its own error correction code. This segmentation allows the system to isolate errors to specific page stripes and apply targeted correction, improving overall reliability without requiring a monolithic complex error correction system. Each page stripe can be independently managed and corrected.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces a two-dimensional error correction architecture where page stripes are arranged in a grid structure with row and column dimensions. This dimensional organization enables cross-page stripe error correction, allowing errors to be corrected by combining information from multiple page stripes. This approach significantly reduces uncorrectable bit error rates while maintaining manageable device complexity through structured organization.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Ease of manufacture

If MLC flash memory is used to reduce cost, then manufacturing cost decreases, but program/erase cycle lifetime and signal-to-noise ratio deteriorate

Engineering Contradiction:
Improvemanufacturing costVSAvoidprogram/erase cycle lifetime
Core Design Contradiction:
Ease of manufactureVSDuration of action of moving object

Solution Approach 1:

The patent implements beforehand cushioning by storing multiple copies of the same data across different page stripes before any failure occurs. This redundant storage strategy ensures that even if some page stripes fail due to limited program/erase cycle lifetime, the data remains accessible through other copies. This approach extends the effective operational life of MLC flash memory while maintaining cost-effectiveness.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

Solution Approach 2:

The patent dynamically adjusts error correction parameters and data distribution strategies based on the degradation state of MLC flash memory. As program/erase cycles increase and signal-to-noise ratio deteriorates, the system adapts by strengthening error correction for affected page stripes and redistributing data to healthier regions. This parameter adaptation extends the usable lifetime of MLC devices.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If redundant error correction schemes are implemented across multiple page stripes, then reliability improves, but device complexity and overhead increase

Engineering Contradiction:
Improvedata protection capabilityVSAvoiderror correction overhead
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent implements universal error correction mechanisms that can operate across multiple page stripes simultaneously. The same error correction code and decoding algorithms are applied uniformly to all page stripes in the grid, reducing the need for separate complex correction systems for each stripe. This multi-functional approach improves reliability through redundancy while controlling device complexity by reusing the same correction infrastructure.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS9026867B1Systems and methods for adapting to changing characteristics of multi-level cells in solid-state memory
Publication Date: 2015.05.05 IP GEM GRP LLC
  • US9026867B1 patent drawing
  • US9026867B1 patent drawing
  • US9026867B1 patent drawing

AI summary

Apparatus and methods provide relatively low uncorrectable bit error rates, low write amplification, long life, fast and efficient retrieval, and efficient storage density such that a solid-state drive (SSD) can be reliably implemented using various types of memory cells, including relatively inexpensive multi-level cell flash. One embodiment intelligently coordinates remapping of bad blocks with error correction code control, which eliminates the tables used to avoid bad blocks.