Adaptive Read Voltage Selection for MLC Flash Noise Compensation
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Solution Overview
Problem
Multi-level cell (MLC) flash memory devices are more susceptible to errors and performance issues due to tighter operating margins compared to single-bit memory devices, which can lead to diminished reliability and accuracy in data storage.
Innovation Solution
A nonvolatile memory device with a cell array connected to bit lines and word lines, featuring a page buffer circuit, voltage generator, and control logic that adapts read operations based on full page or partial page read commands, using different read voltages to compensate for noise factors and improve data sensing accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If multi-level cell (MLC) flash memory devices are used to provide increased storage capacity, then storage capacity is improved, but the device becomes more susceptible to errors and performance issues due to tighter operating margins
Solution Approach 1:
The patent applies parameter changes by dynamically adjusting read voltages based on the number of memory cells being sensed. Different read voltages are selected for full page reads versus partial page reads to compensate for noise factors and maintain reliable data sensing in MLC devices with tighter operating margins
2Adaptability or versatility
If the number of memory cells to be sensed varies between read modes, then read operation flexibility is improved, but read voltage must be dynamically adjusted to maintain sensing accuracy
Solution Approach 1:
The patent implements dynamics by making the read voltage selection adaptive and dynamic based on the read mode. The system automatically selects appropriate read voltages from different voltage groups depending on whether a full page read or partial page read is being performed, allowing flexible operation without manual intervention
Solution Approach 2:
The patent uses feedback mechanisms where the control logic monitors the read command type (full page or partial page) and automatically adjusts the read voltage selection accordingly. This closed-loop approach ensures the correct voltage is applied based on the actual sensing requirements
3Measurement precision
If different read voltages are used for full page read and partial page read modes, then noise compensation is improved, but voltage generator complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the read voltage supply into distinct voltage groups (first read voltages for full page reads, second read voltages for partial page reads). This segmentation allows each voltage group to be optimized for its specific use case while maintaining manageable complexity through systematic organization
Data Source
AI summary
A method of operating a nonvolatile memory device comprises receiving a read command from a memory controller, determining a read mode of the nonvolatile memory device, selecting a read voltage based on the read mode, and performing a read operation on memory cells of a selected page of the nonvolatile memory device using the selected read voltage.