Multi-Level Cell Memory Selective Data Programming

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Solution Overview

Problem

In multi-level cell memory systems, the varying access times for most significant bits (MSBs) and least significant bits (LSBs) lead to non-uniform memory access, which can be unacceptable in certain applications, especially when power quality is a concern and data needs to be quickly backed up to prevent loss.

Innovation Solution

Implementing a method to reprogram data from volatile memory to flash memory with multi-level cells, where MSBs are grouped for fast access pages and LSBs for slow access pages, allowing for selective access speeds based on memory commands and power quality thresholds, ensuring faster access and data backup during potential power failures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If multi-level cell memory is used to increase data density, then storage capacity per cell improves, but access time uniformity deteriorates

Engineering Contradiction:
Improvedata densityVSAvoidaccess time uniformity
Core Design Contradiction:
Quantity of substanceVSLoss of time

Solution Approach 1:

The memory access mechanism is segmented into two independent paths: one for MSBs with fast access and one for LSBs with slow access. This allows each bit to be accessed through its own dedicated path, eliminating the sequential dependency that causes non-uniform access times while maintaining the high density provided by multi-level cells.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different quality levels of access are provided for different parts of the data. MSBs receive fast access treatment while LSBs receive slow access treatment, allowing each part to be accessed according to its specific requirements. This local differentiation resolves the uniformity issue without compromising the overall high-density storage capability.

Inventive Principle:
Principle #3Local quality

2Device complexity

If all cells in a wordline are accessed simultaneously, then memory structure simplicity is maintained, but data backup reliability deteriorates during power failures

Engineering Contradiction:
Improvememory structureVSAvoiddata backup reliability
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The memory access system transitions from a static simultaneous access model to a dynamic selective access model. Based on real-time power quality detection, the system dynamically decides whether to access fast pages, slow pages, or both, allowing the memory controller to adapt its behavior to current power conditions and ensure reliable data backup when needed.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

A feedback mechanism is introduced where power quality information is continuously monitored and fed back to the memory controller. This feedback enables the controller to make informed decisions about which pages to access for data backup, ensuring that critical data is reliably transferred to non-volatile memory during power failures while maintaining simple operation during normal conditions.

Inventive Principle:
Principle #23Feedback

3Speed

If fast access pages are used for all data, then access speed improves, but power consumption increases

Engineering Contradiction:
Improveaccess speedVSAvoidpower consumption
Core Design Contradiction:
SpeedVSUse of energy by moving object

Solution Approach 1:

Instead of always using fast access for all data (excessive action), the system uses fast access only when necessary (partial action). By selectively accessing only the fast pages when power quality is stable and critical data needs rapid retrieval, the system achieves high performance when needed while conserving power during normal operation, avoiding the excessive energy consumption that would result from continuously using fast access paths.

Inventive Principle:
Principle #16Partial or excessive action

Data Source

PatentUS9542312B2Selectively programming data in multi-level cell memory
Publication Date: 2017.01.10 MARVELL ASIA PTE LTD
  • US9542312B2 patent drawing
  • US9542312B2 patent drawing
  • US9542312B2 patent drawing

AI summary

Devices, systems, methods, and other embodiments associated with accessing memory are described. In one embodiment, a method detects that a power quality associated with a volatile memory in a computing device meets a threshold value and in response thereto, reprogramming data from the volatile memory to a flash memory comprising multi-level cells. The reprogramming comprises: copying the data from the volatile memory, and writing the copied data: (1) to the most significant bits of the multi-level cells in the flash memory while skipping the least significant bits of the multi-level cells, or (2) to the least significant bits of the multi-level cells while skipping the most significant bits.