Hybrid MLC-SLC Memory Segmentation for Temperature Compensation
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Solution Overview
Problem
Temperature changes between programming and reading operations in memory systems, such as solid-state drives, cause shifts in threshold voltage ranges, leading to inaccurate data retrieval and increased error rates, especially when using multi-level-cell memory, which is unreliable in extreme temperature conditions.
Innovation Solution
A hybrid memory system utilizing a combination of higher density multi-level-cell (MLC) and lower density single-level-cell (SLC) memory portions, where write attributes, including programming temperature, are stored in the SLC region to accurately determine and compensate for temperature shifts during read operations, minimizing overhead and ensuring reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If multi-level-cell memory is used to increase storage density, then storage capacity is improved, but reliability under temperature changes deteriorates due to threshold voltage shifts
Solution Approach 1:
The memory device is segmented into two distinct regions: a first region with higher density memory cells (MLC) for maximizing storage capacity, and a second region with lower density memory cells (SLC) for storing write attributes. This segmentation allows each region to serve its specific function optimally - the MLC region provides high density while the SLC region ensures reliable attribute storage even under temperature variations.
Solution Approach 2:
The write attributes stored in the SLC region act as intermediaries that mediate between the temperature conditions and the data storage process. By recording the programming temperature and other attributes in the SLC region, the system can compensate for threshold voltage shifts in the MLC region during read operations, thereby maintaining data reliability without sacrificing storage density.
2Device complexity
If write attributes are stored in high density memory region, then storage overhead is reduced, but accuracy of temperature compensation deteriorates
Solution Approach 1:
Different regions of the memory device are assigned different qualities - the first region uses high-density MLC cells for general data storage to maximize capacity efficiency, while the second region uses lower-density SLC cells specifically for storing write attributes that require high accuracy and reliability. This local differentiation ensures that each area performs its specific function with optimal characteristics.
3Reliability
If single-level-cell memory is used to improve reliability under temperature changes, then data accuracy is improved, but storage density deteriorates
Solution Approach 1:
The memory device is segmented into two distinct regions: a first region with higher density memory cells (MLC) for maximizing storage capacity, and a second region with lower density memory cells (SLC) for storing write attributes. This segmentation allows each region to serve its specific function optimally - the MLC region provides high density while the SLC region ensures reliable attribute storage even under temperature variations.
Solution Approach 2:
The invention changes the parameter of memory cell density by using different density levels in different regions. The SLC region uses cells with lower density characteristics specifically for storing write attributes that require high reliability, while the MLC region uses higher density cells for general data storage. This parameter differentiation resolves the contradiction between density and reliability.
Data Source
AI summary
A memory block of a non-volatile memory device is identified. The memory block has a first region and a second region, where a storage density of the first region is larger than the second region. Data is programmed at the first region of the memory block. An attribute of the memory block based on a sensor is received during programming of the data at the memory block. The attribute characterizes the data being programmed at the first region. The attribute is stored at a volatile during programming of the data at the memory block. The attribute is stored on a memory page of the second region responsive to the programming of the data at the first region being complete.