Multilayer Ceramic Capacitor Dielectric Composition for BDV Stability
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Solution Overview
Problem
The step difference between dielectric layers and internal electrodes in multilayer ceramic capacitors can cause defects such as delamination, leading to a deterioration in breakdown voltage (BDV) characteristics due to differences in grain density and average grain size.
Innovation Solution
Incorporating specific ratios of manganese (Mn) and titanium (Ti), silicon (Si), or dysprosium (Dy) in the dielectric layer regions to adjust grain size dispersion and density, thereby enhancing the BDV characteristics by offsetting the step difference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a step difference compensation part is formed by inserting a step difference compensation sheet into the margin portion, then the step difference between dielectric layer and internal electrode is offset, but the breakdown voltage (BDV) characteristic deteriorates due to difference in grain density and average grain size
Solution Approach 1:
The patent applies local quality by forming a second region in the margin portion with different element composition (specifically adjusted ratio of Mn to Ti) compared to the first region in the capacitance formation portion. This localized compositional difference modifies the grain structure in the margin portion to match the grain density and average grain size of the internal electrode, thereby preventing delamination while maintaining BDV characteristics. The second region has higher Mn content relative to Ti compared to the first region, which controls the grain growth in the margin area.
Solution Approach 2:
The patent changes the chemical composition parameters in the margin portion by adjusting the ratio of manganese (Mn) to titanium (Ti) elements. Specifically, the ratio of Mn to Ti in the second region is made higher than in the first region. This parameter change affects the sintering behavior and grain structure formation, enabling the margin portion to have grain density and average grain size that are compatible with the internal electrode, thus preventing delamination without compromising BDV characteristics.
2Productivity
If the stacking degree of internal electrodes is increased to improve integration in smaller size capacitors, then productivity and integration are improved, but step difference occurs due to thickness variation, causing delamination defects
Solution Approach 1:
The patent addresses the step difference problem by creating a second region with distinct local quality in the margin portion. This region has a different element composition (higher Mn/Ti ratio) that specifically targets the step difference area. The localized compositional modification enables the margin portion to compensate for the thickness variation and step difference that occurs when stacking degree is increased, thereby preventing delamination while maintaining high integration in smaller size capacitors.
Solution Approach 2:
The patent applies preliminary action by pre-configuring the element composition in the margin portion before the sintering process. The second region is designed with higher Mn content relative to Ti from the outset, which during sintering produces the desired grain structure that compensates for step difference. This preliminary compositional design ensures that when multiple dielectric layers are stacked to increase integration, the margin portions are already prepared to prevent delamination issues.
Data Source
AI summary
The present disclosure provides a multilayer electronic component which may improve a break down voltage (BDV) characteristic by adjusting a ratio of a content of an element included in a first or second region of a dielectric layer to reduce a difference in dielectric grain size dispersion and grain density in the first or second region.