Ga-Doped MLCC Dielectric Composition for Sintering Mismatch
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Multilayer ceramic capacitors experience short defects due to sintering mismatch between dielectric and internal electrode layers, leading to electrode breakage and reduced reliability during the miniaturization and thin-filmization process.
Innovation Solution
Incorporating a barium titanate-based dielectric layer with gallium (Ga) and accessory ingredients like aluminum (Al), silicon (Si), magnesium (Mg), or vanadium (V) to alleviate sintering mismatch, ensuring improved internal electrode connectivity by controlling peak intensity ratios and sintering at temperatures between 1000°C to 1200°C.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the thickness of dielectric and internal electrode layers is reduced for miniaturization, then the size of multilayer ceramic capacitor is decreased, but sintering mismatch occurs between dielectric layer and internal electrode layer causing electrode breakage
Solution Approach 1:
The patent changes the chemical composition parameters of the dielectric layer by incorporating gallium (Ga) at specific concentrations (0.01-10 parts by mole based on 100 parts by mole of barium titanate) and controlling peak intensity ratios (IBa/IGa and ITi/IGa between 1.0-5.0). This compositional modification allows the dielectric layer to maintain structural integrity at reduced thicknesses while preventing sintering mismatch with internal electrodes, thus resolving the contradiction between miniaturization and reliability.
Solution Approach 2:
The patent creates a composite dielectric material system combining barium titanate-based main ingredient with gallium (Ga) and accessory ingredients (Al, Si, Mg, V). This composite structure enables the dielectric layer to achieve both reduced thickness for miniaturization and enhanced sintering compatibility with internal electrodes, preventing electrode breakage while maintaining small size.
2Force
If sintering temperature is increased to improve densification, then the density of dielectric layer is increased, but internal electrode connectivity deteriorates due to excessive sintering mismatch
Solution Approach 1:
The patent modifies the chemical composition of the dielectric layer by adding gallium (Ga) and controlling accessory ingredients, which changes the sintering behavior parameters. This allows achieving adequate densification at moderate sintering temperatures (1000-1200°C) without causing excessive sintering mismatch with internal electrodes, thus maintaining both density and electrode connectivity.
3Reliability
If gallium (Ga) content is increased to improve sintering mismatch, then internal electrode connectivity is enhanced, but manufacturing complexity increases due to precise ratio control requirements
Solution Approach 1:
The patent establishes specific parameter ranges for gallium content (0.01-10 parts by mole) and peak intensity ratios (IBa/IGa and ITi/IGa: 1.0-5.0) that provide an optimal balance between improving internal electrode connectivity and maintaining manufacturing feasibility. These defined parameters guide the manufacturing process to achieve reliable sintering without excessive complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Minimizes electrode breakage and enhances internal electrode connectivity, resulting in a highly reliable multilayer ceramic capacitor without short circuits, with internal electrode connectivity ranging from 80% to 100%.
Implementation Method 1
The capacitor body may be formed by sintering at a temperature of 1000° C. to 1200° C.
Data Source
AI summary
Provided is a multilayer ceramic capacitor and a method of manufacturing the same. The multilayer ceramic capacitor includes a capacitor body including a dielectric layer and an internal electrode layer, and an external electrode disposed outside the capacitor body. The dielectric layer includes barium titanate-based main ingredient including barium (Ba) and titanium (Ti), and gallium (Ga)Peak intensity ratio of Ba/Ga (IBa/IGa), obtained by TEM-EDS analysis of a region from an interface between the dielectric layer and the internal electrode layer to a depth surface of 10 nm to 500 nm into the dielectric layer, is 1.0 to 5.0.