Multilayer Ceramic Capacitor Mg Grain Growth Control

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Solution Overview

Problem

Multilayer ceramic capacitors face challenges in securing DC-bias characteristics and necessary capacitance under high frequency and low electric field conditions, particularly with the miniaturization and multifunctionalization of electronic products, where proper grain growth control of dielectric grains is essential.

Innovation Solution

Incorporating magnesium (Mg) with a content of more than 0 mole and less than or equal to 1.0 mole relative to titanium (Ti) in the dielectric layer, cover portions, and margin portions of the ceramic body to control grain growth and enhance capacitance and DC-bias characteristics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If the size of the multilayer ceramic capacitor is reduced for miniaturization, then the capacitor can meet small size requirements, but the capacitance value and DC-bias characteristics deteriorate

Engineering Contradiction:
Improvecapacitor sizeVSAvoidDC-bias characteristics
Core Design Contradiction:
Volume of moving objectVSReliability

Solution Approach 1:

The patent applies different MgO content specifications to different regions of the ceramic body: the active portion (where internal electrodes are disposed) has MgO content of 0.01-1.0 mole ratio relative to Ti, while cover portions have MgO content of 0.1-2.0 mole ratio relative to Ti. This local differentiation allows the active portion to maintain proper grain growth for capacitance while cover portions provide protective functions, resolving the contradiction between miniaturization and DC-bias characteristics.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the chemical composition parameters by specifying MgO content as a mole ratio relative to Ti (0.01-1.0 in active portion, 0.1-2.0 in cover portions). This parameter control enables proper grain growth of dielectric grains even in miniaturized capacitors, maintaining DC-bias characteristics and capacitance values despite reduced size.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If the MgO content is increased to control grain growth, then DC-bias characteristics improve, but the capacitance value decreases

Engineering Contradiction:
ImproveDC-bias characteristicsVSAvoidcapacitance value
Core Design Contradiction:
ReliabilityVSQuantity of substance

Solution Approach 1:

The patent differentiates MgO content between the active portion (0.01-1.0 mole ratio) and cover portions (0.1-2.0 mole ratio) of the ceramic body. This local quality approach ensures that the active portion maintains optimal grain growth for capacitance generation, while cover portions have higher MgO for grain growth control and DC-bias improvement, thus resolving the contradiction between capacitance value and DC-bias characteristics.

Inventive Principle:
Principle #3Local quality

3Speed

If the capacitor is designed for high frequency operation, then it meets 5G network requirements, but the capacitance value under low electric field conditions deteriorates

Engineering Contradiction:
Improveoperating frequencyVSAvoidcapacitance under low electric field
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent specifies MgO content as a critical compositional parameter (0.01-1.0 mole ratio relative to Ti in active portion) that controls grain growth of dielectric grains. This parameter optimization enables the capacitor to maintain stable capacitance values under low electric field conditions while supporting high frequency operation for 5G networks, resolving the contradiction between operating frequency and capacitance reliability.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The controlled grain growth ensures improved DC-bias characteristics and necessary capacitance under high frequency and low electric field conditions, while also enhancing moisture resistance and adhesion properties.

Implementation Method 1

Proper grain growth control of dielectric grains in the ceramic body of the multilayer ceramic capacitor is essential for securing DC-bias characteristics and securing necessary capacitance under the high frequency and low electric field conditions as described above.

Methodology Applied
Scientific EffectGrain growth control:

Implementation Method 2

the dielectric layer, the cover portions, and the margin portions of the active portion each include magnesium (Mg) having a content of more than 0 mole, and less than or equal to 1.0 mole, relative to a content of titanium (Ti) included in the dielectric layer, the cover portions and the margin portions of the active portion, respectively

Methodology Applied
Scientific EffectSolid solution strengthening: Solid Solution Strengthening

Data Source

PatentUS11682525B2Multilayer ceramic capacitor
Publication Date: 2023.06.20 SAMSUNG ELECTRO MECHANICS CO LTD
  • US11682525B2 patent drawing
  • US11682525B2 patent drawing
  • US11682525B2 patent drawing

AI summary

A multilayer ceramic capacitor includes: a ceramic body including a dielectric layer, a first internal electrode and a second internal electrode arranged to face each other with the dielectric layer interposed therebetween; and a first external electrode disposed on an exterior surface of the ceramic body and a second external electrode disposed on the exterior surface of the ceramic body, wherein the ceramic body includes an active portion, forming capacity, cover portions disposed on upper and lower portions of the active portion, and margin portions disposed on a side surface of the active portion, and wherein the dielectric layer, the cover portions, and the margin portions of the active portion include magnesium (Mg) having content of more than 0 mole, and less than or equal to 1.0 mole, relative to titanium (Ti) included in the dielectric layer, the cover portions and the margin portions of the active portion.