MLCC Dielectric Secondary Phases for Thin-Layer Reliability
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Solution Overview
Problem
The miniaturization and high capacitance demands of multilayer ceramic capacitors require thinner dielectric and internal electrode layers, leading to increased electric fields and a need for improved dielectric reliability.
Innovation Solution
Incorporating a plurality of first secondary phases with a specific composition (Ni, Mg, Al, Si, and O) into the dielectric layers, where at least one phase has a major axis to minor axis length ratio of 4 or more, to enhance grain boundary resistance and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the thickness of dielectric layers and internal electrodes is decreased to increase the number of stacked layers, then miniaturization and high capacitance are achieved, but the electric field applied to the dielectric increases and reliability deteriorates
Solution Approach 1:
The patent changes the chemical composition parameters of the dielectric material by introducing specific secondary phases (Ni-Mg-Al-Si-O system) with controlled ratios. This compositional modification enables the dielectric to maintain high reliability even at reduced thickness by fundamentally altering its electrical and structural properties at the grain boundary level
Solution Approach 2:
The patent creates a composite dielectric structure by combining the primary dielectric material with multiple secondary phases having different functions. The Ni-Mg-Al-Si-O secondary phases form a composite system where each component contributes specific properties: Ni provides grain boundary resistance, Mg and Al contribute to structural stability, Si enhances dielectric constant, and O ensures proper stoichiometry, collectively improving reliability at thin dimensions
2Productivity
If the thickness of dielectric layers and internal electrodes is decreased to increase the number of stacked layers, then miniaturization and high capacitance are achieved, but withstand voltage and time to failure decrease
Solution Approach 1:
The patent applies local quality modification by introducing secondary phases specifically at the grain boundaries of the dielectric material. This localized modification targets the critical regions where electrical breakdown typically occurs, enhancing withstand voltage and time to failure properties at the micro-scale without affecting the overall thin-layer structure
Solution Approach 2:
The patent performs preliminary action by pre-forming the Ni-Mg-Al-Si-O secondary phases within the dielectric material before final sintering. This advance preparation ensures that the grain boundary resistance is already established and optimized before the component is put into service, preventing electrical breakdown and extending time to failure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach improves the reliability of ceramic electronic components by enhancing grain boundary resistance, leading to improved withstand voltage, initial time to failure, and mean time to failure, even at reduced dielectric and internal electrode layer thicknesses.
Implementation Method 1
synthesizing a dielectric material and growing grains of the dielectric material in an aqueous solution by first heat treating the aqueous solution
Implementation Method 2
forming a coating layer including the first element on a surface of the dielectric material by second heat treating the aqueous solution
Implementation Method 3
drying the dielectric material on which the coating layer is formed
Data Source
AI summary
A ceramic electronic component includes: a body including dielectric layers and internal electrodes; and external electrodes disposed on the body and connected to the internal electrodes, wherein the dielectric layer includes a plurality of first secondary phases, the first secondary phase is a secondary phase including Ni, Mg, Al, Si, and O, and at least one of the plurality of first secondary phases has a ratio of a major axis length to a minor axis length of 4 or more.