Multilayer Ceramic Capacitor Void Layout for Crack Resistance

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional multilayer ceramic capacitors experience cracks due to electrostriction when high voltage is applied, which affects high-temperature load reliability and moisture resistance, and reducing the applied voltage to prevent cracks compromises screening effectiveness.

Innovation Solution

The multilayer ceramic capacitor design includes dielectric layers with varying void distributions, particularly fewer voids in end regions to concentrate electrostrictive stress and improve sintering, ensuring better contact between internal and external electrodes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If high voltage is applied for screening, then screening effectiveness is improved, but cracks form due to electrostriction

Engineering Contradiction:
Improvescreening effectivenessVSAvoidhigh-temperature load reliability
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The patent applies local quality by creating dielectric layers with non-uniform void distributions - specifically, end portions of dielectric layers have different void characteristics than central portions. This local differentiation allows the end portions (where electrostrictive stress concentrates) to have enhanced crack resistance while maintaining overall screening capability at high voltage.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes physical parameters of the dielectric layers by controlling void distribution, void size, and void concentration in different regions. By adjusting these parameters locally - particularly reducing void size or concentration at end portions - the material withstands electrostrictive stress better during high-voltage screening while preserving screening effectiveness.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If high voltage is applied, then electrostriction occurs causing cracks, but reducing voltage prevents cracks while compromising screening

Engineering Contradiction:
Improvemoisture resistanceVSAvoidscreening effectiveness
Core Design Contradiction:
ReliabilityVSMeasurement precision

Solution Approach 1:

The patent implements local quality modifications in dielectric layers by creating regions with different void characteristics - end portions have reduced void size or concentration compared to central portions. This local enhancement at stress-concentration zones prevents cracks during high-voltage screening while allowing the overall structure to maintain moisture resistance and screening capability.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent applies preliminary action by pre-structuring the dielectric layers with controlled void distributions before voltage application. The end portions are pre-configured with fewer or smaller voids to proactively resist electrostrictive stress, preventing crack formation before it occurs during high-voltage screening operations.

Inventive Principle:
Principle #10Preliminary action

3Ease of manufacture

If uniform void distribution is present in dielectric layers, then manufacturing is simplified, but electrostrictive stress concentration causes cracks at end regions

Engineering Contradiction:
Improvedielectric layer fabricationVSAvoidcrack resistance
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent transitions from uniform to non-uniform void distribution in dielectric layers. End portions are specifically designed with different void characteristics (reduced size or concentration) compared to central portions. This local differentiation targets the specific region where electrostrictive stress concentrates, preventing cracks while maintaining feasible manufacturing processes.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the void distribution parameters across the dielectric layer structure. By controlling void size, void concentration, or void density to vary spatially - particularly reducing these parameters at end portions - the structure gains crack resistance in critical regions while remaining manufacturable through adjusted fabrication parameters.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design reduces or prevents cracks by managing electrostrictive stress, enhancing the capacitor's reliability and durability under high voltage conditions.

Implementation Method 1

electrostriction occurs when a voltage is applied. The stress caused by the electrostriction concentrates at the ends in the length direction and the width direction of an effective portion of the multilayer ceramic capacitor

Methodology Applied
Scientific EffectElectrostriction: Electrostriction

Data Source

PatentUS20250391606A1Multilayer ceramic capacitor
Publication Date: 2025.12.25 MURATA MFG CO LTD
  • US20250391606A1 patent drawing
  • US20250391606A1 patent drawing
  • US20250391606A1 patent drawing

AI summary

A multilayer ceramic capacitor includes dielectric layers, internal electrode layers, an inner layer section, first and second side surfaces, and first and second end surfaces, and an outer layer section sandwiching the inner layer section. The capacitor includes first and second external electrodes on the first and second end surfaces. The inner layer section includes an internal dielectric layer including voids, and a length direction middle-side dielectric layer arranged in a region in the middle of the length direction in the inner layer section, and a length direction end-side dielectric layer in a region in the end of the length direction in the inner layer section. A quantity of voids included in the length direction end-side dielectric layer is smaller than a quantity of voids in the length direction middle-side dielectric layer.