MMIC Insulating Film Stack for Warpage and Moisture Resistance
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Solution Overview
Problem
As semiconductor substrates become thinner, they are more prone to warping, leading to peeling of inorganic films and reduced moisture resistance in semiconductor devices.
Innovation Solution
A semiconductor device configuration with specific insulating films having varying dielectric constants and contact regions to enhance adhesion, including silicon nitride or silicon oxide films for moisture resistance and polyimide for low dielectric constant, ensuring the insulating films remain adhered even with substrate warping, thereby suppressing parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the semiconductor substrate is made thinner to reduce device size, then the device dimensions are reduced, but the substrate becomes more prone to warping and film peeling
Solution Approach 1:
The patent employs a composite insulating film structure combining organic and inorganic materials with different dielectric constants. The first insulating film (higher dielectric constant) and third insulating film (higher dielectric constant) are positioned at the substrate interface and outer layers respectively, while the second insulating film (lower dielectric constant) is positioned in between. This composite structure optimizes both adhesion to the thin substrate and electrical performance, preventing film peeling while maintaining reduced device dimensions.
Solution Approach 2:
The patent applies local quality by positioning insulating films with different dielectric constants at specific locations within the stacked structure. The higher dielectric constant films are placed at critical interfaces (substrate contact and outer layers) where adhesion and moisture resistance are most needed, while the lower dielectric constant film is positioned in the intermediate layer where space optimization is prioritized. This spatial differentiation of material properties resolves the contradiction between miniaturization and reliability.
2Reliability
If insulating films with high dielectric constant are used to improve adhesion, then film adhesion is improved, but parasitic capacitance increases
Solution Approach 1:
The patent positions insulating films with different dielectric constants at specific locations within the stacked structure. The higher dielectric constant films are placed at critical interfaces (substrate contact and outer layers) where adhesion and moisture resistance are most needed, while the lower dielectric constant film is positioned in the intermediate layer where space optimization is prioritized. This spatial differentiation of material properties resolves the contradiction between miniaturization and reliability.
Solution Approach 2:
The patent employs a composite insulating film structure combining organic and inorganic materials with different dielectric constants. The first insulating film (higher dielectric constant) and third insulating film (higher dielectric constant) are positioned at the substrate interface and outer layers respectively, while the second insulating film (lower dielectric constant) is positioned in between. This composite structure optimizes both adhesion to the thin substrate and electrical performance, preventing film peeling while maintaining reduced device dimensions.
3Ease of manufacture
If a simple two-layer insulating film structure is used, then manufacturing is simpler, but moisture resistance is insufficient
Solution Approach 1:
The patent employs a composite insulating film structure combining organic and inorganic materials with different dielectric constants. The first insulating film (higher dielectric constant) and third insulating film (higher dielectric constant) are positioned at the substrate interface and outer layers respectively, while the second insulating film (lower dielectric constant) is positioned in between. This composite structure optimizes both adhesion to the thin substrate and electrical performance, preventing film peeling while maintaining reduced device dimensions.
Solution Approach 2:
The patent divides the insulating film into three distinct segments or layers, each with specific functional requirements. The first layer provides substrate adhesion and moisture barrier, the second layer provides low dielectric constant for electrical performance, and the third layer provides outer protection and additional moisture resistance. This segmentation allows each layer to be optimized for its specific function while working together as an integrated system.
Data Source
AI summary
A semiconductor device includes a semiconductor substrate, a semiconductor element formed on the semiconductor substrate, a first insulating film covering the semiconductor element, a second insulating film formed on the first insulating film, and a third insulating film formed on the second insulating film. The first and third insulating films allow less moisture to pass than the second insulating film. A dielectric constant of the second insulating film is lower than dielectric constants of the first and third insulating films. The first insulating film has a first portion that is in contact with a first region of an upper surface of the semiconductor substrate. The third insulating film has a second portion that is in contact with upper and side surfaces of the first portion and a second region of the upper surface. The second region is farther away from the semiconductor element than the first region.