Millimeter-Wave Receiver Circuit Back-Gate Biasing Against Saturation
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Solution Overview
Problem
Current receiver circuits for millimeter wave devices, particularly in vehicular radar and 5G communication, face challenges with saturation from transmitter signals and external interference, limiting their linearity and compression points.
Innovation Solution
The implementation of a receiver circuit design that includes transimpedance amplifiers with PMOS and NMOS transistors, utilizing back gate biasing to adjust threshold voltages and enhance compression points, thereby improving the circuit's performance against saturation and interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If multiple amplifier stages and voltage-mode mixers are used to improve receiver circuit performance, then gain is increased, but linearity is limited and compression point remains low
Solution Approach 1:
The patent changes the operating parameters of the transistors by applying back-gate voltages to adjust threshold voltages dynamically. This allows optimization of the transistor operating point to achieve both high gain and improved linearity, resolving the contradiction between power amplification and signal fidelity in mm-wave receiver circuits
2Measurement precision
If receiver circuit sensitivity is increased to detect weaker signals, then detection capability is improved, but saturation from transmitter signals and external interference occurs
Solution Approach 1:
The patent applies preliminary anti-action by using back-gate voltage control to pre-adjust the transistor threshold voltages before the harmful saturation effects occur. This proactive parameter adjustment creates a operating point that is resistant to saturation from strong transmitter signals and external interference, allowing the receiver to maintain sensitivity without suffering from overload effects
Data Source
AI summary
We disclose a receiver circuit which may be used in mm-wave devices. The receiver circuit comprises a transimpedance amplifier comprising PMOS and NMOS transistors, wherein the back gate voltages provided to the transistors may be adjusted. By adjusting the back gate voltages during device operation, structural variations and temperature variations in the threshold voltages of the transistors may be minimized and the gain compression tolerance of the receiver circuit may be increased.