Mn Ni Co Precursor Design for ALD Film Stability
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Solution Overview
Problem
Current methods for generating high-quality, reproducible Mn-, Ni-, and Co-containing thin films on solid substrates face challenges in precursor decomposition and stability, requiring economically feasible processes that minimize precursor decomposition before substrate contact and facilitate easy decomposition post-deposition.
Innovation Solution
A process involving compounds of the general formula M(X)n(R1)p(R2)q, where M is Mn, Ni, or Co, X is a coordinating ligand, and R1 and R2 are alkyl, alkenyl, aryl, or silyl groups, allowing for controlled film formation with high volatility and stability, enabling deposition and subsequent ligand removal to achieve desired film properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If volatile precursors are used to bring metal atoms into the gaseous state at moderate temperatures, then deposition can occur at moderate temperatures, but the precursors decompose before contact with the substrate
Solution Approach 1:
The patent modifies the chemical structure of the precursor by changing ligands (e.g., using beta-diketonate ligands with specific R groups), steric bulk, and electronic properties to adjust volatility and thermal stability parameters, enabling deposition at moderate temperatures without premature decomposition
Solution Approach 2:
The patent employs composite precursor molecules combining metal centers with specially designed organic ligands (e.g., beta-diketonates, amines, phosphines) that provide both volatility for gas-phase transport and thermal stability to prevent decomposition, creating a multi-component molecular structure that satisfies conflicting requirements
2Productivity
If highly reactive precursors are used for atomic layer deposition, then film formation is efficient, but the precursors decompose before deposition
Solution Approach 1:
The patent designs precursors with pre-organized reactive groups and labile ligands that are positioned and activated in advance, allowing the precursor to remain stable during transport but react efficiently upon substrate contact, with the reactive behavior triggered by surface interaction rather than thermal decomposition
Solution Approach 2:
The patent creates precursors with dynamic ligand behavior where certain ligands are labile and can be easily replaced or removed upon substrate interaction, while the core metal-ligand structure remains stable during transport, providing conditional reactivity that switches from stable to reactive based on environmental conditions
3Manufacturing precision
If precursors with specific ligands are used to achieve high film quality, then the process becomes more complex, but the ligands must be removed after deposition
Solution Approach 1:
The patent employs precursors with specifically designed ligands that can be selectively removed or decomposed after deposition, such as volatile organic ligands that desorb or decompose at mild conditions, separating the film-forming function from the ligand function and enabling clean film formation without complex removal steps
Solution Approach 2:
The patent uses sacrificial ligands as intermediaries that facilitate the deposition process by providing solubility, volatility, and controlled reactivity, then are easily removed afterward, acting as temporary mediators that enable the main film-forming reaction without permanently affecting the final film structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the generation of high-quality, reproducible Mn-, Ni-, and Co-containing films with minimal precursor decomposition, offering flexibility in modifying precursor properties to suit specific needs and maintaining stability during processing.
Implementation Method 1
depositing the compound of general formula (I) onto a solid substrate wherein the deposition is performed from the gaseous or aerosol state
Implementation Method 2
X is a ligand which coordinates M wherein at least one X coordinates M via a nitrogen atom
Data Source
AI summary
The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process for the generation of inorganic films comprising depositing the compound of general formula (I) onto a solid substrate (I), wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, 2, 3, or 4, R1 is an alkyl group, an alkenyl group, an aryl group, a halogen, or a silyl group, R2 is an alkyl group, an alkenyl group, an aryl group, or a silyl group, p and q are 1 or 2, wherein p+q=3, and m is 1, 2, or 3.