Mn-Zn-O Sputtering Target with W or Mo for DC Stability
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Solution Overview
Problem
Current methods for forming Mn—Zn—O sputtering targets face challenges such as high costs and composition deviations in large-scale systems, and existing targets do not effectively prevent anomalous discharge during DC sputtering, which limits their use in optical data storage media.
Innovation Solution
A Mn—Zn—O sputtering target with a chemical composition of Mn, Zn, and at least one element X (W or Mo) is developed, where the relative density is 90% or more and specific resistance is 1×10−3 Ω·cm or less, using a combination of oxide and metal powders, and a production method involving wet mixing and sintering at 700°C or higher to prevent anomalous discharge.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If combinatorial sputtering is used to form Mn—Zn—Ma—O recording layer, then the recording layer can be formed without rare metal Pd, but the large scale system leads to increased cost and composition deviation
Solution Approach 1:
The patent combines multiple elements (Mn, Zn, Ma, and additional metal elements like W, Mo, Ta, Nb) into a single composite target material. This merging approach allows DC sputtering to form the recording layer without requiring complex combinatorial sputtering systems, thereby reducing system complexity and cost while maintaining composition control
Solution Approach 2:
The patent creates a composite target containing Mn, Zn, Ma, and at least one additional metal element (W, Mo, Ta, or Nb) with specific content ratios. This composite material design enables the target to function effectively in DC sputtering, achieving both the desired recording layer formation and reduced system complexity
2Ease of operation
If conventional targets are used for DC sputtering, then the sputtering process can be performed, but anomalous discharge occurs which limits use in optical data storage media
Solution Approach 1:
The patent changes the chemical composition parameters of the target by adding specific metal elements (W, Mo, Ta, or Nb) with controlled content ratios (0.1-10 at% each). This parameter modification prevents anomalous discharge during DC sputtering while maintaining the ease of operation for the sputtering process
Solution Approach 2:
The patent replaces expensive rare metal Pd with more abundant metals (W, Mo, Ta, Nb) in the target composition. This substitution maintains the functional performance for DC sputtering and anomalous discharge prevention while using more economically viable materials
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The target achieves high density and low resistance, preventing anomalous discharge during DC sputtering and enabling effective use in optical data storage media, particularly in forming recording layers.
Implementation Method 1
A sputtering method in which a sputtering target made of an alloy or a sintered body is bombarded with ions of Ar etc.
Implementation Method 2
a sintering step of sintering the mixed powder at a temperature of 700° C. or higher after the mixing step
Data Source
AI summary
Provided is a Mn—Zn—O sputtering target which can be used in DC sputtering, and a production method for the target. The Mn—Zn—O sputtering target comprises a chemical composition containing Mn, Zn, O, and at least one element X, the element X being a single one or two elements selected from the group consisting of W and Mo. The target has a relative density of 90% or more and a specific resistance of 1×10−3 Ω·cm or less.